STGP10HF60KD ST Microelectronics, STGP10HF60KD Datasheet - Page 4

• Manufacturer Part Number: STGP10HF60KD
• Description: Short-circuit Rugged IGBT
• Manufacturer: ST Microelectronics

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Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 5.
V
Symbol
Symbol
V
j
V
(BR)CES
g
= 25 °C unless otherwise specified)
C
CE(sat)
I
C
I
C
GE(th)
Q
Q
GES
CES
fs
Q
oes
ies
res
ge
gc
g
(1)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Collector-emitter breakdown
voltage (V
Collector-emitter saturation
voltage
Gate threshold voltage
Gate-emitter leakage
current (V
Collector cut-off current
(V
Forward transconductance
Static
Dynamic
GE
= 0)
Parameter
Parameter
CE
GE
= 0)
= 0)
Doc ID 16136 Rev 1
V
V
V
(see Figure 3)
I
V
V
V
V
V
V
V
C
GE
CE
CE
GE
GE
GE
CE
CE
CE
CE
= 1 mA
= 15 V, I
= 15 V, I
= V
= ±20 V, T
= 600 V
= 600 V, T
= 25 V, f = 1 MHz, V
= 390 V, I
= 15 V
= 15 V
GE
Test conditions
Test conditions
, I
C
,
C
C
I
= 250 µA
C
= 5 A
= 5 A, T
C
j
j
= 150 °C
= 150 °C
= 5 A
= 5 A,
j
= 150 °C
GE
= 0
Min.
Min. Typ. Max. Unit
600
4.5
-
-
STGx10HF60KD
TBD
TBD
TBD
TBD
TBD
TBD
Typ. Max. Unit
1.6
2
3
±100
150
6.5
1
-
-
mA
nC
nC
nC
nA
µA
pF
pF
pF
V
V
V
V
S