RT3WLMM ISAHAYA ELECTRONICS CORPORRATION, RT3WLMM Datasheet - Page 3

• Manufacturer Part Number: RT3WLMM
• Description: Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type
• Manufacturer: ISAHAYA ELECTRONICS CORPORRATION

TYPICAL CHARACTERISTICS （Tr1）
PRELIMINARY
10000
1000
100
100
0.1
50
40
30
20
10
10
10
0
1
1
0.1
0.1
0
COLLECTOR TO BASE VOLTAGE VCB(V)
COLLECTOR EMITTER VOLTAGE VCE(V)
Ta=25℃
VCE=6V
100(@IC=1mA)
Ta=25℃
IE=0
f=1MHz
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
COMMON EMITTER OUTPUT
DC FORWARD CURRENT GAIN
0.16mA
COLLECTOR CURRENT IC(mA)
VS. COLLECTOR CURRENT
1
1
0.14mA
1
2
0.12mA
0.10mA
10
3
ISAHAYA ELECTRONICS CORPORATION
0.08mA
10
100
0.06mA
4
Ta=25℃
0.02mA
0.04mA
IB=0
1000
100
5
250
200
150
100
50
40
30
20
10
50
0
0
-0.1
0
Ta=25℃
VCE=6V
Ta=25℃
VCE=6V
BASE TO EMITTER VOLTAGE VBE(V)
COMMON EMITTER TRANSFER
0.2
GAIN BAND WIDTH PRODUCT
EMITTER CURRENT IE(mA)
VS. EMITTER CURRENT
For Low Frequency Amplify Application
-1
0.4
0.6
-10
RT3WLMM
Silicon Epitaxial Type
Composite Transistor
0.8
-100
1