LSCD6C60 SemiWell Semiconductor Co., Ltd., LSCD6C60 Datasheet - Page 2
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LSCD6C60
Manufacturer Part Number
LSCD6C60
Description
Silicon Controlled Rectifiers
Manufacturer
SemiWell Semiconductor Co., Ltd.
Datasheet
1.LSCD6C60.pdf
(5 pages)
Electrical Characteristics
2/5
※ Notes :
SCD6C60
Symbol
1. Pulse Width = 1.0 ms , Duty cycle ≤ 1%
2. R
R
R
dv/dt
I
V
V
V
DRM
I
th(j-c)
th(j-a)
I
GT
GD
TM
GT
H
GK
Current not Included in measurement.
Repetitive Peak Off-State
Current
Peak On-State Voltage (1)
Gate Trigger Current (2)
Gate Trigger Voltage (2)
Non-Trigger Gate Voltage (1)
Critical Rate of Rise Off-State
Voltage
Holding Current
Thermal Impedance
Thermal Impedance
Items
( T
C
= 25 °C unless otherwise noted )
V
V
V
V
Linear slope up to V
Gate open
I
Junction to case
Junction to Ambient
I
T
AK
TM
AK
AK
D
= 100mA, Gate Open
= 6 V(DC), R
= 9 A
= 6 V(DC), R
= 12 V, R
= V
DRM
L
Conditions
=100 Ω
L
L
=10 Ω
=10 Ω
D
= V
DRM
tp=380
T
67%
T
C
T
T
T
T
C
T
C
C
C
C
J
= 125 °C
= 125 °C
㎲
,
= 125°C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Min.
200
0.2
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Ratings
Typ.
─
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─
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─
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Max.
200
1.6
1.5
2.0
10
15
20
70
─
─
°C/W
°C/W
Unit
V/㎲
mA
mA
㎂
V
V
V