ZX3CDBS1M832 Zetex Semiconductors plc., ZX3CDBS1M832 Datasheet - Page 6

• Manufacturer Part Number: ZX3CDBS1M832
• Description: Zx3cdbs1m832 - 20v Npn Low Saturation Transistor And 40v, 1a Schottky Diode Combination Dual
• Manufacturer: Zetex Semiconductors plc.

ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions.
ZX3CDBS1M832
PARAMETER
TRANSISTOR ELECTRICAL CHARACTERISTICS
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Diode Capacitance
Reverse Recovery
Time
SYMBOL
V
V
V
I
I
I
V
V
V
h
f
C
t
t
V
V
I
C
t
CBO
EBO
CES
R
T
(on)
(off)
rr
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
(BR)R
F
D
amb
= 25°C unless otherwise stated).
MIN.
200
300
200
100
100
7.5
40
20
40
6
TYP.
0.98
0.88
100
115
190
210
400
450
360
180
170
400
240
265
305
355
390
425
495
420
8.2
27
90
140
23
60
50
25
12
8
MAX.
-1.05
-0.95
150
135
250
270
270
290
340
400
450
500
600
100
25
25
25
15
30
—
UNIT
MHz
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
nA
nA
nA
pF
pF
ns
ns
ns
V
V
V
V
V
V
A
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
f=100MHz
V
V
I
I
I
I
I
I
I
I
I
I
V
f=1MHz,V
switched from
I
Measured at I
ISSUE 3- OCTOBER 2007
F
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B1
R
F
F
F
F
F
F
F
F
CB
EB
CES
CB
CC
R
=50mA*
=100mA*
=250mA*
=500mA*
=750mA*
=1000mA*
=1500mA*
=1000mA,T
=100 A
=10mA*
=100 A
=0.1A, I
=1A, I
=2A, I
=3A, I
=4.5A, I
=4.5A, I
=4.5A, V
=10mA, V
=0.2A, V
=2A, V
=6A, V
=50mA, V
=300 A
= 500mA to I
=30V
=I
=6V
=32V
=10V, f=1MHz
=10V, I
=16V
B2
=10mA
B
B
B
CE
CE
=10mA*
=50mA*
=100mA*
B
B
B
R
CE
CE
=10mA*
=125mA*
=125mA*
=2V*
=2V*
C
=25V
CE
CE
=3A
=2V*
=2V*
a
R
=100°C*
R
=2V*
=10V
= 50mA
= 500mA