SCH2810 Sanyo Semiconductor Corporation, SCH2810 Datasheet - Page 2

• Manufacturer Part Number: SCH2810
• Description: Mosfet P-channel Silicon Mosfet Sbd Schottky Barrier Diode
• Manufacturer: Sanyo Semiconductor Corporation

Electrical Characteristics at Ta=25 C
Package Dimensions
unit : mm
2230A
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
1
6
Parameter
1.6
5
2
0.5
4
3
0.2
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
6 : Drain
SANYO : SCH6
0.2
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
Symbol
t d (on)
t d (off)
I DSS
I GSS
Coss
Ciss
Crss
V SD
Qgs
Qgd
yfs
Qg
V R
V F
I R
t rr
C
t r
t f
I D =--1mA, V GS =0
V DS =--12V, V GS =0
V GS = 9.6V, V DS =0
V DS =--6V, I D =--1mA
V DS =--6V, I D =--0.7A
I D =--0.7A, V GS =- -10V
I D =--0.4A, V GS =- -4.5V
I D =--0.1A, V GS =- -4V
V DS =--6V, f=1MHz
V DS =--6V, f=1MHz
V DS =--6V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =--10V, V GS =- -10V, I D =--1.3A
V DS =--10V, V GS =- -10V, I D =--1.3A
V DS =--10V, V GS =- -10V, I D =--1.3A
I S =--1.3A, V GS =0
I R =0.5mA
I F =0.5A
V R =6V
V R =10V, f=1MHz
I F =I R =100mA, See specified Test Circuit.
SCH2810
Conditions
Electrical Connection
1
6
2
5
min
0.72
--1.0
--12
15
3
4
Ratings
typ
--0.94
200
340
370
145
1.2
7.5
3.8
0.5
0.5
0.4
45
35
20
16
12
13
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
6 : Drain
Top view
max
0.46
--2.4
--1.5
270
490
530
10
90
10
--1
No.8246-2/6
Unit
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
pF
ns
V
V
S
V
V
V
A
A
A