MA793 Panasonic Corporation of North America, MA793 Datasheet

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MA793

Manufacturer Part Number
MA793
Description
Schottky Barrier Diodes Sbd
Manufacturer
Panasonic Corporation of North America
Datasheet

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Schottky Barrier Diodes (SBD)
MA3Z793
Silicon epitaxial planar type
For super high speed switching
For small current rectification
I Features
I Absolute Maximum Ratings T
Note) * 1: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
I Electrical Characteristics T
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
O
Publication date: August 2001
• Two MA3Z792 (MA792) is contained in one package (series con-
• I
• Optimum for high frequency rectification because of its short
• Low forward voltage V
• S-Mini type 3-pin package
Reverse voltage (DC)
Repetitive peak reverse-voltage
Peak forward
current
Average forward
current
Non-repetitive peak forward-
surge-current
Junction temperature
Storage temperature
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
nection)
reverse recovery time (t
F(AV)
* 2: Value per chip
2. Rated input/output frequency: 250 MHz
and the leakage of current from the operating equipment.
= 100 mA rectification is possible
Parameter
Parameter
* 1
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Bias Application Unit N-50BU
Series
Single
Series
Single
*
A
F
rr
* 2
* 2
)
and good rectification efficiency
(MA793)
Wave Form Analyzer
(SAS-8130)
R
i
Symbol
= 50 Ω
V
I
I
F(AV)
T
I
V
FSM
RRM
T
FM
stg
R
a
j
Symbol
= 25°C
V
I
C
t
a
R
rr
F
t
= 25°C
−55 to +125
Rating
300
200
100
125
3. * : t
30
30
70
1
V
I
V
I
I
F
F
rr
Note) The part number in the parenthesis shows conventional part number.
R
R
= 100 mA
= I
= 10 mA, R
SKH00098AED
= 30 V
= 0 V, f = 1 MHz
rr
V
R
R
measuring instrument
= 100 mA
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
Unit
= 0.35 ns
mA
mA
= 2 µs
°C
°C
V
V
A
Conditions
t
p
L
= 100 Ω
t
I
F
I
I
R
Marking Symbol: M4A
Internal Connection
F
R
Output Pulse
L
= 100 mA
= 100 mA
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
= 100 Ω
Anode 2
I
t
rr
rr
(0.65)
= 10 mA
1
1.3
2.0
±0.1
±0.2
(0.65)
t
3
2
0.3
Min
+0.1
–0
1
Typ
20
2
3
2
SMini3-F1 Package
Max
0.55
0.9
15
±0.1
Unit: mm
0.15
Unit
µA
pF
ns
V
+0.1
–0.05
1

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MA793 Summary of contents

Page 1

... Schottky Barrier Diodes (SBD) MA3Z793 (MA793) Silicon epitaxial planar type For super high speed switching For small current rectification I Features • Two MA3Z792 (MA792) is contained in one package (series con- nection) • 100 mA rectification is possible F(AV) • Optimum for high frequency rectification because of its short ...

Page 2

MA3Z793  75°C 25° 125°C −20° −1 10 − 0.1 0.2 0.3 0.4 0.5 0 Forward voltage V F  ...

Page 3

... No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. ...

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