MA792 Panasonic Corporation of North America, MA792 Datasheet

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MA792

Manufacturer Part Number
MA792
Description
Schottky Barrier Diodes Sbd
Manufacturer
Panasonic Corporation of North America
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MA792
Manufacturer:
Panasonic
Quantity:
72 000
Schottky Barrier Diodes (SBD)
MA3Z792
Silicon epitaxial planar type
For super high speed switching
For small current rectification
I Features
I Absolute Maximum Ratings T
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
I Electrical Characteristics T
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
O
Publication date: August 2001
• High-density mounting is possible
• I
• Optimum for high frequency rectification because of its short
• Low forward voltage V
• S-Mini type 3-pin package
Reverse voltage (DC)
Repetitive peak reverse-voltage
Peak forward current
Average forward current
Non-repetitive peak forward-
surge-current
Junction temperature
Storage temperature
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
reverse recovery time (t
F(AV)
2. Rated input/output frequency: 250 MHz
and the leakage of current from the operating equipment.
= 100 mA rectification is possible
Parameter
Parameter
*
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Bias Application Unit N-50BU
*
F
A
rr
and good rectification efficiency
)
(MA792)
Symbol
V
I
Wave Form Analyzer
(SAS-8130)
R
I
F(AV)
T
I
V
FSM
RRM
T
i
FM
stg
= 50 Ω
R
a
j
Symbol
= 25°C
V
I
C
t
a
R
rr
F
t
= 25°C
−55 to +125
Rating
300
100
125
3. * : t
30
30
1
V
I
V
I
I
F
F
rr
Note) The part number in the parenthesis shows conventional part number.
R
R
= 100 mA
= I
= 10 mA, R
SKH00096AED
rr
= 30 V
= 0 V, f = 1 MHz
R
measuring instrument
= 100 mA
V
Unit
mA
mA
°C
°C
V
V
A
R
Conditions
L
= 100 Ω
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
t
p
Marking Symbol: M3T
Internal Connection
1 : Anode
2 : N.C.
3 : Cathode
t
(0.65)
1
I
1.3
2.0
F
±0.1
±0.2
(0.65)
I
I
R
F
R
Output Pulse
3
L
2
= 100 mA
0.3
= 100 mA
Min
= 100 Ω
+0.1
–0
I
t
rr
rr
1
= 10 mA
Typ
2.0
20
3
t
2
SMini3-F1 Package
Max
0.55
0.9
15
±0.1
Unit: mm
0.15
Unit
µA
pF
ns
V
+0.1
–0.05
1

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MA792 Summary of contents

Page 1

... Schottky Barrier Diodes (SBD) MA3Z792 (MA792) Silicon epitaxial planar type For super high speed switching For small current rectification I Features • High-density mounting is possible • 100 mA rectification is possible F(AV) • Optimum for high frequency rectification because of its short reverse recovery time ( • ...

Page 2

MA3Z792  75°C 25° −20° 125° −1 10 − 0.1 0.2 0.3 0.4 0.5 0 Forward voltage V F  ...

Page 3

... No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. ...

Page 4

... This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. ...

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