MA791 Panasonic Corporation of North America, MA791 Datasheet
MA791
Manufacturer Part Number
MA791
Description
Silicon Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.MA791.pdf
(3 pages)
Schottky Barrier Diodes (SBD)
MA3X791
Silicon epitaxial planar type
For super high speed switching
For small current rectification
Note) * 1: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
Publication date: February 2002
y
Reverse voltage (DC)
Repetitive peak reverse-voltage
Peak forward
current
Average forwar
current
Non-repetitive peak forward-
surge-current
Junction temperature
Storage temperature
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
Two MA3X786 (MA786) is contained in one package (series
connection)
I
Optimum for high frequency rectification because of its short
reverse recovery time (t
Low forward voltage V
Mini type 3-pin package
Features
F(AV)
Absolute Maximum Ratings T
Electrical Characteristics T
* 2: Value per chip
2. Rated input/output frequency: 250 MHz
and the leakage of current from the operating equipment.
Parameter
100 mA rectification is possible
Parameter
* 1
Pulse Generator
(PG-10N)
R
s
Series
Single
Series
Single
50
*
Bias Application Unit N-50BU
F
rr
* 2
* 2
and good rectification efficiency
)
A
y
y
(MA791)
Symbol
V
I
I
F(AV)
T
I
V
FSM
RRM
T
Wave Form Analyzer
(SAS-8130)
R
FM
stg
i
R
a
j
Symbol
50
V
I
C
t
a
25 C
R
rr
F
t
25 C
55 to 125
Rating
300
200
100
125
3. * : t
30
30
70
1
V
I
V
I
I
F
F
rr
Note) The part number in the parenthesis shows conventional part number.
R
R
SKH00090BED
rr
100 mA
I
10 mA, R
measuring instrument
R
30 V
0 V, f
100 mA
V
R
Unit
mA
mA
V
V
A
Conditions
C
C
1 MHz
t
L
r
Input Pulse
10%
t
t
p
r
90%
100
0.35 ns
0.05
2 s
t
p
t
Marking Symbol: M4A
Internal Connection
10˚
I
F
I
I
R
(0.95) (0.95)
Output Pulse
F
R
L
1
2.90
1.9
100 mA
100 mA
100
+0.20
–0.05
I
t
rr
0.1
rr
Min
0.40
3
2
10 mA
+0.10
–0.05
t
1
Typ
20
3
2
2
Mini3-G1 Package
Max
0.55
15
0.16
1: Anode 1
2: Cathode 2
3: Cathode 1
EIAJ: SC-59
+0.10
–0.06
Anode 2
Unit: mm
Unit
pF
ns
V
A
1
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MA791 Summary of contents
Page 1
... Schottky Barrier Diodes (SBD) MA3X791 (MA791) Silicon epitaxial planar type For super high speed switching For small current rectification Features Two MA3X786 (MA786) is contained in one package (series connection) I 100 mA rectification is possible F(AV) Optimum for high frequency rectification because of its short reverse recovery time (t ...
Page 2
MA3X791 125 0.1 0.2 0.3 0.4 0.5 0.6 Forward voltage ...
Page 3
... No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. ...