ARF1510 Microsemi Corporation, ARF1510 Datasheet

ARF1510

Manufacturer Part Number

ARF1510

Description

Rf Power Mosfet

Manufacturer

Microsemi Corporation

Datasheet

1.ARF1510.pdf (2 pages)

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RF POWER MOSFET

FULL-BRIDGE

The ARF1510 is four RF power transistor arranged in an H-Bridge conﬁ guration. It is intended for off-line 300V

operation in high power scientiﬁ c, medical and, industrial RF power generator and ampliﬁ er applications up to 40

MHz.

MAXIMUM RATINGS

STATIC ELECTRICAL CHARACTERISTICS

THERMAL CHARACTERISTICS

Symbol

•

isolation

DSS

GSS

θJHS

Speciﬁ ed 300 Volt, 27.12 MHz Characteristics:

DSS

θJC

DSS

STG

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed

(ON)

(TH)

Output Power = 750 Watts.

Gain = 17dB (Class D)

Characteristic (per package unless otherwise noted)

Junction to Case

Junction to Sink

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Gate-Source Voltage

Total Device Dissipation @ T

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

On State Drain Voltage

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Forward Transconductance (V

RMS Voltage

Gate Threshold Voltage (V

(60Hz Sinewave from terminals to mounting surface for 1 minute)

(Use High Efﬁ ciency Thermal Joint Compound and Planar Heat Sink Surface.)

Microsemi Website - http://www.microsemi.com

(ON)

= V

= 25°C

= 3.25A, V

= 25V, I

, I

= ±30V, V

= 1000V, V

= 800V, V

= 0V, I

= 50mA)

= 3.25A)

= 10V)

= 250 μA)

= 0V)

= 0V, T

•

= 0V)

High Performance Power RF Package.

Very High Breakdown for Improved Ruggedness.

Low Thermal Resistance.

Nitride Passivated Die for Improved Reliability.

All Ratings: T

= 125°C)

S1D2

S3D4

= 25°C unless otherwise speciﬁ ed.

400V

1000

TBD

MIN

-55 to 175

ARF 1510

S1D2

1000

1500

0.16

750W

±30

300

TYP

ARF1510

6.5

6.8

ARF1510

±100

MAX

0.10

250

7.5

40MHz

Amps

Watts

UNIT

mhos

Volts

UNIT

°C/W

Volts

°C

μA

S3D4

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ARF1510 Summary of contents

Page 1

... RF POWER MOSFET FULL-BRIDGE The ARF1510 is four RF power transistor arranged in an H-Bridge conﬁ guration intended for off-line 300V operation in high power scientiﬁ c, medical and, industrial RF power generator and ampliﬁ er applications MHz. • Speciﬁ ed 300 Volt, 27.12 MHz Characteristics: • ...

Page 2

... BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling G4 and mounting to avoid damage to this area. These devices must never be thrown away with general industri domestic waste. ARF1510 UNIT pF ns UNIT dB % ...

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