ARF475FL Microsemi Corporation, ARF475FL Datasheet

ARF475FL

Manufacturer Part Number

ARF475FL

Description

Rf Power Mosfet N-channel Enhancement Mode

Manufacturer

Microsemi Corporation

Datasheet

1.ARF475FL.pdf (4 pages)

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RF POWER MOSFET

N - CHANNEL PUSH - PULL PAIR

The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage

push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.

MAXIMUM RATINGS

STATIC ELECTRICAL CHARACTERISTICS

THERMAL CHARACTERISTICS

Symbol

∆V

•

fs1

DSS

GSS

DGO

θJHS

Specified 150 Volt, 128 MHz Characteristics:

DSS

θJC

DSS

STG

(ON)

(TH)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

(TH)

fs2

Output Power = 900 Watts Peak

Gain = 15dB (Class AB)

Efficiency = 50% min

Parameter

Drain-Source Voltage

Drain-Gate Voltage

Continuous Drain Current @ T

Gate-Source Voltage

Total Device Dissipation @ T

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

On State Drain Voltage

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Forward Transconductance (V

Forward Transconductance Match Ratio (V

Gate Threshold Voltage (V

Gate Threshold Voltage Match (V

Characteristic

Junction to Case

Case to Sink

(Use High Efficiency Thermal Grease and Planar Heat Sink Surface.)

Microsemi Website - http://www.microsemi.com

(ON)

= V

= 25°C

= 5A, V

= 25°C

= 15V, I

, I

= V

= ±30V, V

= V

= 50V, V

(each device)

= 200mA)

= 0V, I

DSS

, I

= 10V)

= 5A)

(each device)

, V

= 200mA)

= 15V, I

= 250 µA)

= 0V)

= 0, T

= 0V)

•

High Performance Push-Pull RF Package.

High Voltage Breakdown and Large SOA

Low Thermal Resistance.

= 5A)

for Superior Ruggedness.

Common Source

Push-Pull Pair

All Ratings: T

= 125°C)

165V 450W 150MHz

= 25°C unless otherwise specified.

MIN

500

MIN

0.9

ARF475FL

-55 to 175

500

±30

910

300

TYP

0.15

0.30

2.9

3.6

3.3

0.165

±100

MAX

0.33

100

500

1.1

0.2

Amps

Watts

UNIT

mhos

Volts

UNIT

°C/W

Volts

°C

µA

Related parts for ARF475FL

ARF475FL Summary of contents

Page 1

... RF POWER MOSFET N - CHANNEL PUSH - PULL PAIR The ARF475FL is a matched pair of RF power transistors in a common source configuration designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz. • Specified 150 Volt, 128 MHz Characteristics: • ...

Page 2

... MIN TYP MAX 780 830 125 130 7 9 5 4.0 7 MIN TYP MAX 150V Degradation in Output Power C iss C oss C rss . 100 200 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS 100 125 150 T , CASE TEMPERATURE (°C) C ARF475FL UNIT pF ns UNIT dB % ...

Page 3

... Set to zero when modeling only the case to junction. 0.0135F 0.161F Z (Ω) drain - drain OL 5.2 -j10 41 -j20 1.37 -j5.2 26 -j25 .53 -j2.6 16 -j23 .25 -j1.0 10 -j20 .25 +j0.2 6.7 -j17 Ω 15mA each side DQ ARF475FL Note Duty Factor Peak θ 1.0 ...

Page 4

... The white ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken dur- ing handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste. ARF475FL ...

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