FCB11N60F Fairchild Semiconductor, FCB11N60F Datasheet

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FCB11N60F

Manufacturer Part Number
FCB11N60F
Description
Fcb11n60f 600v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number:
FCB11N60F
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2006 Fairchild Semiconductor Corporation
FCB11N60F Rev. A1
FCB11N60F
600V N-Channel MOSFET
Features
• 650V @T
• Typ. R
• Fast Recovery Type ( t
• Ultra low gate charge (typ. Q
• Low effective output capacitance (typ. C
• 100% avalanche tested
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θJA
θJA
T
STG
*
DS(on)
J
= 150°C
= 0.32Ω
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
rr
= 120ns )
g
= 40nC)
G
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
S
Parameter
C
oss
= 25°C)
.eff = 95pF)
D
FCB Series
2
-PAK
D
C
C
= 25°C)
= 100°C)
1
Description
SuperFET
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TM
G
is, Farichild’s proprietary, new generation of high
FCB11N60F
FCB11N60F
-55 to +150
± 30
12.5
600
340
125
300
1.0
11
33
11
50
62.5
7
1.0
40
S
D
SuperFET
www.fairchildsemi.com
May 2006
Unit
W/°C
V/ns
Unit
°C/W
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM
tm

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FCB11N60F Summary of contents

Page 1

... R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation FCB11N60F Rev. A1 Description TM SuperFET voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. ...

Page 2

... J ≤ 11A, di/dt ≤ 1200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FCB11N60F Rev. A1 Package Reel Size 2 D -PAK 330mm T = 25°C unless otherwise noted C Conditions ...

Page 3

... D Figure 5. Capacitance Characteristics 6000 5000 4000 C oss 3000 C 2000 iss C 1000 rss Drain-Source Voltage [V] DS FCB11N60F Rev. A1 Figure 2. Transfer Characteristics Notes : 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage 1 10 ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FCB11N60F Rev. A1 (Continued) Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0 1.5 1.0 Notes : 250 μ A 0.5 D 0.0 100 150 200 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FCB11N60F Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FCB11N60F Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions 9.90 1.27 ±0.10 2.54 TYP 10.00 FCB11N60F Rev -PAK 2 ±0.20 0.80 ±0.10 2.54 TYP ±0.20 7 4.50 ±0.20 +0.10 1.30 –0.05 0.10 ±0.15 2.40 ±0.20 +0.10 0.50 –0.05 10.00 ±0.20 (8.00) (4.40) (2XR0.45) 0.80 ±0.10 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FCB11N60F Rev. A1 ISOPLANAR™ PowerEdge™ LittleFET™ PowerSaver™ MICROCOUPLER™ PowerTrench ® MicroFET™ QFET MicroPak™ ...

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