BTS 432E2 Infineon Technologies, BTS 432E2 Datasheet - Page 4

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BTS 432E2

Manufacturer Part Number
BTS 432E2
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS 432E2

Packages
P-TO220-5
Channels
1.0
Ron @ Tj = 25°c
38.0 mOhm
Recommended Operating Voltage Min.
4.5 V
Recommended Operating Voltage Max.
42.0 V
Il(sc)
24.0 A
Parameter and Conditions
at T
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)
( max 400 s if V
Repetitive short circuit current limit
Short circuit shutdown delay after input pos. slope
Output clamp (inductive load switch off)
Short circuit shutdown detection voltage
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation
Reverse battery (pin 3 to 1)
Integrated resistor in V
Diagnostic Characteristics
Open load detection current
8
9
10)
11
Semiconductor Group
)
)
min value valid only, if input "low" time exceeds 30 s
V
at V
T
) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
(pin 3 to 5)
(on-condition)
j Start
ON
j
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
Short circuit current limit for max. duration of 400 s, prior to shutdown (see t
While demagnetizing load inductance, dissipated energy in PROFET is E
E
Reverse current I
these condition is dependent on the size of the heatsink. Reverse I
external GND-resistor (150 ). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
= 25 °C, V
T
AS
OUT
> V
j
= T
=
= 150 °C, single pulse
1
ON(SC)
= V
/
jt
2
* L * I
(see timing diagrams, page 10)
bb
bb
,
- V
= 12 V unless otherwise specified
2
L
ON
* (
ON(CL) ,
GND
V
> V
ON(CL)
V
of
8)
ON(CL)
bb
ON(SC)
I
L
line
0.3 A at V
- V
= 30 mA
bb
11
)
), see diagram page 8
)
bb
T
= -32 V through the logic heats up the device. Time allowed under
j
=-40..+150°C:
T
j
T
=25..150°C:
V
V
j
T
T
bb
bb
=+150°C:
T
j
j
=-40 °C
j
=-40°C:
10)
= 12 V:
= 24 V:
=25°C:
4
,
9
)
,
:
I
I
t
V
V
T
E
E
E
-V
R
I
L(SCp)
L(SCr)
d(SC)
L (OL)
Symbol
jt
T
ON(CL)
ON(SC)
AS
Load12
Load24
bb
bb
jt
GND
can be reduced by an additional
AS
= V
150
min
d(SC)
24
22
80
--
--
--
--
--
--
--
--
2
2
ON(CL)
page 4)
Values
120
8.3
typ
44
35
58
10
* i
--
--
--
--
--
--
--
--
L
(t) dt, approx.
BTS 432 E2
2003-Oct-01
max
400
900
750
1.7
1.3
1.0
74
32
--
--
--
--
--
--
--
--
Unit
mA
°C
A
A
V
V
K
V
s
J

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