FDMS8570S Fairchild Semiconductor, FDMS8570S Datasheet - Page 2

• Manufacturer Part Number: FDMS8570S
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDMS8570S Rev.D1
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
by the user's board design.
iss
oss
rss
g
ΔT
ΔT
g
g
gs
gd
rr
Symbol
AS
θJA
DSS
GS(th)
DSS
J
J
of 45 mJ is based on starting T
is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
J
= 25
Parameter
°
C, L = 0.4 mH, I
a) 50 °C/W when mounted on a
1 in
2
T
pad of 2 oz copper
J
= 25 °C unless otherwise noted
AS
= 15 A, V
DD
= 23 V, V
V
V
V
V
V
f = 1 MHz
V
I
V
V
V
V
V
V
I
I
I
V
V
D
F
D
D
DD
GS
GS
GS
DS
GS
GS
GS
GS
DS
GS
GS
DS
GS
= 24 A, di/dt = 300 A/μs
= 10 mA, referenced to 25 °C
= 1 mA, V
= 10 mA, referenced to 25 °C
= 13 V, V
= 13 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= 5 V, I
= 0 V, I
= 0 V, I
= 20 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= +12 V/-8 V, V
GS
2
= 10 V. 100% test at L = 0.1 mH, I
DS
Test Conditions
, I
D
S
S
D
GS
D
D
D
= 2 A
= 24 A
D
= 24 A
GS
GEN
GS
= 1 mA
= 24 A,
= 24 A, T
= 24 A
= 22 A
= 0 V
= 0 V,
= 0 V
= 6 Ω
V
I
D
DS
DD
= 24 A
= 0 V
J
= 13 V,
= 125 °C
(Note 2)
(Note 2)
θJC
is guaranteed by design while R
AS
= 23.8 A.
b)
Min
1.1
25
125 °C/W when mounted on
a minimum pad of 2 oz
copper.
2825
662
215
0.6
0.8
0.8
Typ
1.5
2.1
2.4
2.9
6.4
4.4
22
19
94
33
42
22
-3
11
23
4
3
±100
Max
0.8
1.2
500
2.2
2.8
3.3
3.9
θCA
www.fairchildsemi.com
is determined
mV/°C
mV/°C
Units
mΩ
nC
pF
pF
pF
μA
nA
nC
nC
nC
nC
ns
Ω
ns
ns
ns
ns
V
S
V
V