FDMS8560S Fairchild Semiconductor, FDMS8560S Datasheet - Page 3

• Manufacturer Part Number: FDMS8560S
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDMS8560S Rev.D1
Typical Characteristics
150
120
150
120
90
60
30
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
90
60
30
Figure 3. Normalized On Resistance
0
0
Figure 1.
0.5
-75
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
GS
= 35 A
-50
vs Junction Temperature
= 5 V
= 10 V
V
0.3
1.0
DS
V
T
-25
GS
J
On Region Characteristics
,
V
V
,
V
V
DRAIN TO SOURCE VOLTAGE (V)
GS
GS
, GATE TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
GS
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= 10V
= 4.5 V
= 3.5 V
= 3 V
0
T
0.6
1.5
J
= 125
25
μ
s
o
C
50
T
0.9
2.0
J
= 25 °C unless otherwise noted
V
GS
75
T
μ
J
= 2.5 V
s
= -55
T
o
100 125 150
J
C )
1.2
2.5
= 25
o
C
o
C
1.5
3.0
3
0.01
3.5
3.0
2.5
2.0
1.5
1.0
0.5
200
100
0.1
Figure 2.
10
6
5
4
3
2
1
0
Figure 4.
1
0.0
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
V
3
SD
0.2
, BODY DIODE FORWARD VOLTAGE (V)
V
30
Normalized On-Resistance
V
GS
On-Resistance vs Gate to
GS
I
Source Voltage
D
4
T
= 4.5 V
Source to Drain Diode
,
,
J
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
= 125
0.4
5
60
o
C
μ
T
s
V
J
GS
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= -55
I
D
= 3.5 V
T
T
= 35 A
V
0.6
J
J
90
GS
= 125
= 25
o
7
C
= 2.5 V
T
o
J
C
o
= 25
C
8
V
0.8
120
V
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GS
o
GS
C
= 3 V
= 10 V
9
μ
s
1.0
150
10