CM800DZ-34H Powerex Inc, CM800DZ-34H Datasheet - Page 2

• Manufacturer Part Number: CM800DZ-34H
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM800DZ-34H

• Prx Availability: RequestQuote
• Voltage: 1700V
• Current: 800A
• Circuit Configuration: Dual
• Rohs Compliant: No
• Recommended Gate Driver: VLA500K-01R
• Interface Circuit Ref Design: BG2A

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Note 1. Pulse width and repetition rate should be such that the device junction temp. (T
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
V
V
I
I
I
I
P
T
T
V
I
V
I
V
C
C
C
Q
t
t
t
t
V
t
Q
R
R
R
C
CM
E (Note 2)
EM (Note 2)
CES
GES
d (on)
r
d (off)
f
rr
Symbol
Symbol
stg
j
CES
GES
C (Note 3)
iso
GE(th)
CE(sat)
ies
oes
res
EC (Note 2)
th(j-c)Q
th(j-c)R
th(c-f)
G
rr (Note 2)
—
—
2. I
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Note 2)
E
, V
EC
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
(Tj = 25 C)
Item
Item
j
) should not increase beyond 150 C.
(Tj = 25 C)
V
V
T
Pulse
T
Pulse
T
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
V
I
V
T
T
V
V
V
V
V
R
Resistive load switching operation
I
I
die / dt = –1600A / s
Junction to case, IGBT part (Per 1/2 module)
Junction to case, FWDi part (Per 1/2 module)
Case to fin, conductive grease applied (Per 1/2 module)
C
E
E
C
C
C
j
j
GE
CE
CE
GE
CE
GE
CC
CC
GE1
G
= 25 C
= 125 C
= 800A, V
= 800A
= 80mA, V
= 25 C
= 25 C
= 25 C, IGBT part
= 3.3
= 0V
= V
= 0V
= V
= 10V
= 0V
= 850V, I
= 850V, I
= V
CES
GES
GE2
, V
, V
GE
CE
= 15V
C
C
GE
CE
= 800A, V
= 800A
= 0V
= 10V
I
C
= 0V
= 0V
= 800A, V
Conditions
Conditions
GE
—
—
= 15V
GE
= 15V
j
) does not exceed T
(Note 1)
(Note 1)
(Note 4)
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
jmax
rating.
Min
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
CM800DZ-34H
6.67 ~ 13.00
–40 ~ +150
–40 ~ +125
2.84 ~ 6.00
0.88 ~ 2.00
Ratings
Limits
0.020
1700
1600
1600
5000
4000
800
800
Typ
1.0
2.80
3.20
2.60
—
—
—
—
—
—
—
—
—
150
INSULATED TYPE
20
5.5
9.0
3.6
6.6
72
0.025
0.043
Max
3.64
1.60
2.00
2.70
0.80
3.38
2.70
—
—
—
—
—
—
—
6.5
0.5
12
Oct. 2002
K/W
K/W
K/W
Unit
N·m
N·m
N·m
Unit
mA
nF
nF
nF
W
kg
V
V
V
A
A
A
A
V
V
V
C
C
A
C
C
s
s
s
s
s