CM1200E4C-34N Powerex Inc, CM1200E4C-34N Datasheet - Page 3

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CM1200E4C-34N

Manufacturer Part Number
CM1200E4C-34N
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet

Specifications of CM1200E4C-34N

Prx Availability
RequestQuote
Voltage
1700V
Current
1200A
Circuit Configuration
Chopper, Buck, Boost
Rohs Compliant
No
Recommended Gate Driver
VLA500K-01R
Interface Circuit Ref Design
BG2A

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM1200E4C-34N
Manufacturer:
JST
Quantity:
14 500
Part Number:
CM1200E4C-34N
Manufacturer:
MIT
Quantity:
20 000
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM1200E4C-34N
Chopper IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Emitter-Collector Voltage**
Forward Voltage***
Turn-On Delay Time
Turn-On Rise Time
Turn-On Switching Energy
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Switching Energy
Reverse Recovery Time**
Reverse Recovery Time**
Reverse Recovery Charge**
Reverse Recovery Energy**
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***The symbols represent characteristics of the clamp diode (Clamp Di).
Thermal Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance, Case to Fin
Mechanical Characteristics, T
Characteristics
Comparative Tracking Index
Clearance
Creepage Distance
Internal Inductance
Internal Lead Resistance
8/05
j
= 25 °C unless otherwise specified
j
= 25 °C unless otherwise specified
j
R
R
R
= 25 °C unless otherwise specified
R
V
L
V
Symbol
Symbol
R
Symbol
th(j-c)
th(j-c)
th(j-c)
C-E(int)
CE(sat)
t
t
C-E(int)
I
C
I
GE(th)
C
C
V
E
d(on)
d(off)
CES
GES
E
E
th(c-f)
CTI
Q
Q
V
I
t
oes
res
EC
t
t
rec
ies
on
off
rr
rr
G
F
r
f
rr
Q
D
D
Per Module, Thermal Grease Applied
V
V
V
V
I
GE1
GE1
V
I
C
CC
I
I
C
I
E
I
F
CE
E
F
CE
= 1200A, V
= 1200A, V
= 1200A, V
= 1200A, V
= 1200A, V
= 1200A, V
= 850V, I
= V
V
V
V
= -V
= -V
I
= V
V
C
V
CC
CC
CC
GE
CE
di
= 120mA, V
CES
CES
GE2
GE2
e
= 850V, I
= 850V, I
Inductive Load
= 850V, I
Inductive Load
Test Conditions
Test Conditions
Test Conditions
Inductive load
= V
/dt = -2900A/µs,
= 10V, V
f = 100kHz,
T
, V
T
Per FWDi
Per IGBT
Clamp Di
C
, V
j
GE
GES
= 15V, R
= 15V, R
j
GE
GE
GE
= 125°C,
GE
GE
GE
= 25°C
= 1200A, V
GE
= 15V, T
= 15V, T
= 0V, T
= 0V, T
, V
= 0V, T
= 0V, T
= 0V, T
C
C
E
= 0V, T
GE
CE
CE
= 1200A,
= 1200A,
= 1200A,
G(on)
G(off)
= 0V,
= 10V
= 0V
j
j
j
j
j
j
= 125°C
= 125°C
j
j
GE
= 25°C
= 25°C
= 125°C
= 125°C
= 25°C
= 25°C
= 0.6Ω,
= 3.3Ω,
= 15V
Min.
Min.
Min.
19.5
32.0
600
6.0
2.15
16.0
0.28
Typ.
176
380
360
560
300
220
Typ.
Typ.
3.0
7.0
2.4
9.6
2.8
6.8
2.6
2.3
2.6
2.3
0.8
0.4
1.2
0.3
1.0
30
Max.
2.80
Max.
Max.
19.0
42.0
42.0
4.0
8.0
8.0
0.5
3.3
Amperes
K/kW
K/kW
K/kW
K/kW
Volts
mJ/P
mJ/P
mJ/P
Units
Volts
Volts
Volts
Volts
Volts
Volts
Units
Units
mm
mm
mA
mA
µA
nF
nF
nF
µC
µC
nH
µs
µs
µs
µs
µs
3

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