CM1200E4C-34N Powerex Inc, CM1200E4C-34N Datasheet - Page 3
CM1200E4C-34N
Manufacturer Part Number
CM1200E4C-34N
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet
1.CM1200E4C-34N.pdf
(6 pages)
Specifications of CM1200E4C-34N
Prx Availability
RequestQuote
Voltage
1700V
Current
1200A
Circuit Configuration
Chopper, Buck, Boost
Rohs Compliant
No
Recommended Gate Driver
VLA500K-01R
Interface Circuit Ref Design
BG2A
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CM1200E4C-34N
Manufacturer:
JST
Quantity:
14 500
Part Number:
CM1200E4C-34N
Manufacturer:
MIT
Quantity:
20 000
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM1200E4C-34N
Chopper IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Emitter-Collector Voltage**
Forward Voltage***
Turn-On Delay Time
Turn-On Rise Time
Turn-On Switching Energy
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Switching Energy
Reverse Recovery Time**
Reverse Recovery Time**
Reverse Recovery Charge**
Reverse Recovery Energy**
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***The symbols represent characteristics of the clamp diode (Clamp Di).
Thermal Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance, Case to Fin
Mechanical Characteristics, T
Characteristics
Comparative Tracking Index
Clearance
Creepage Distance
Internal Inductance
Internal Lead Resistance
8/05
j
= 25 °C unless otherwise specified
j
= 25 °C unless otherwise specified
j
R
R
R
= 25 °C unless otherwise specified
R
V
L
V
Symbol
Symbol
R
Symbol
th(j-c)
th(j-c)
th(j-c)
C-E(int)
CE(sat)
t
t
C-E(int)
I
C
I
GE(th)
C
C
V
E
d(on)
d(off)
CES
GES
E
E
th(c-f)
CTI
Q
Q
V
I
t
oes
res
EC
t
t
rec
–
–
ies
on
off
rr
rr
G
F
r
f
rr
Q
D
D
Per Module, Thermal Grease Applied
V
V
V
V
I
GE1
GE1
V
I
C
CC
I
I
C
I
E
I
F
CE
E
F
CE
= 1200A, V
= 1200A, V
= 1200A, V
= 1200A, V
= 1200A, V
= 1200A, V
= 850V, I
= V
V
V
V
= -V
= -V
I
= V
V
C
V
CC
CC
CC
GE
CE
di
= 120mA, V
CES
CES
GE2
GE2
e
= 850V, I
= 850V, I
Inductive Load
= 850V, I
Inductive Load
Test Conditions
Test Conditions
Test Conditions
Inductive load
= V
/dt = -2900A/µs,
= 10V, V
f = 100kHz,
T
, V
T
Per FWDi
Per IGBT
Clamp Di
C
, V
j
GE
GES
= 15V, R
= 15V, R
j
GE
GE
GE
= 125°C,
GE
GE
GE
= 25°C
= 1200A, V
GE
–
–
–
–
–
= 15V, T
= 15V, T
= 0V, T
= 0V, T
, V
= 0V, T
= 0V, T
= 0V, T
C
C
E
= 0V, T
GE
CE
CE
= 1200A,
= 1200A,
= 1200A,
G(on)
G(off)
= 0V,
= 10V
= 0V
j
j
j
j
j
j
= 125°C
= 125°C
j
j
GE
= 25°C
= 25°C
= 125°C
= 125°C
= 25°C
= 25°C
= 0.6Ω,
= 3.3Ω,
= 15V
Min.
Min.
Min.
19.5
32.0
600
6.0
—
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
2.15
16.0
0.28
Typ.
176
380
360
560
300
220
Typ.
Typ.
3.0
7.0
2.4
9.6
2.8
6.8
2.6
2.3
2.6
2.3
0.8
0.4
1.2
0.3
1.0
30
—
–
–
–
–
–
–
–
Max.
2.80
Max.
Max.
19.0
42.0
42.0
4.0
8.0
8.0
0.5
–
–
–
–
–
–
3.3
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Amperes
K/kW
K/kW
K/kW
K/kW
Volts
mJ/P
mJ/P
mJ/P
Units
Volts
Volts
Volts
Volts
Volts
Volts
Units
Units
mm
mm
mΩ
mA
mA
µA
nF
nF
nF
µC
µC
nH
µs
µs
µs
µs
µs
–
3