QIS1260015 Powerex Inc, QIS1260015 Datasheet - Page 3

• Manufacturer Part Number: QIS1260015
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of QIS1260015

• Prx Availability: RequestQuote
• Voltage: 1200V
• Current: 600A
• Circuit Configuration: Single
• Rohs Compliant: No

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
QIS1260015
Single IGBTMOD™ NX-Series Module
600 Amperes/1200 Volts
12/10 Rev. 1
Electrical and Mechanical Characteristics, T
Inverter Sector
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Load
Switch
Time
Emitter-Collector Voltage
Thermal and Mechanical Characteristics, T
Characteristics
Module Lead Resistance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
(Case to Heatsink)
Internal Gate Resistance
External Gate Resistance
NTC Thermistor Sector, T
Characteristics
Zero Power Resistance
Deviation of Resistance
B Constant
Power Dissipation
*1 Case temperature (T
*2 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*9 B
(25/50)
= In(
R
R
50
25
)/(
T
C
25
1
) and heatsink temperature (T
–
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
T
1
50
) R
T
25
25
*1
; Resistance at Absolute Temperature T
= 25 [°C] + 273.15 = 298.15 [K], T
j
= 25°C unless otherwise specified
*1
*1
f
) measured point is just under the chips.
R
R
V
B
V
Symbol
Symbol
R
Symbol
V
CE(sat)
t
t
R
th(j-c)
R
∆R/R
th(j-c)
(25/50)
I
I
C
GE(th)
C
C
d(on)
d(off)
CES
GES
th(c-f)
P
Q
R
EC
lead
Gint
oes
R
res
t
t
ies
25
r
G
f
G
*3
Q
D
50
j
= 50 [°C] + 273.15 = 323.15 [K]
j
= 25°C unless otherwise specified
25
= 25°C unless otherwise specified
[K], R
V
Inductive Loas Switching Operation
Main Termnals-Chip (Per Switch)
CC
I
I
C
C
I
I
I
E
C
50
E
Approximate by Equation
T
= 600A, V
= 600A, V
= 600V, I
Thermal Grease Applied
= 600A, V
; resistance at Absolute Temperature T
= 600A, V
V
= 600A, V
C
R
V
CC
V
V
G
= 100°C, R
I
CE
C
(Per 1 Module)
CE
GE
= 2.2Ω, I
Test Conditions
Test Conditions
= 600V, I
= 60mA, V
V
= 10V, V
T
Test Conditions
T
T
T
GE
Per FWDi
= V
= V
Per IGBT
C
C
C
C
C
GE
GE
GE
= 125°C
GE
GE
= 600A, V
= 25°C
= 25°C
= 25°C
CES
GES
= ±15V,
= 15V, T
= 15V, T
= 0V, T
E
= 15V, T
= 0V, T
100
C
GE
, V
, V
= 600A,
CE
= 600A,
GE
CE
= 493Ω
= 0V
*2
= 10V
GE
j
j
j
j
= 0V
= 0V
= 125°C
j
= 25°C
= 125°C
= 150°C
= 25°C
= 15V
*9
50
*6
*6
*6
*6
*6
[K],
4.85
Min.
Min.
Min.
–7.3
0.7
1.4
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
0.015
3000
3375
5.00
Typ.
Typ.
Typ.
2.0
2.2
0.9
0.6
2.0
1.9
1.0
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7
Preliminary
0.033
0.028
Max.
Max.
Max.
5.15
+7.8
100
660
190
700
600
0.5
2.6
9.0
2.0
2.6
1.0
1.2
1.1
1.3
—
—
—
—
—
10
—
10
8
°C/W
°C/W
°C/W
Units
Volts
Volts
Volts
Volts
Volts
Volts
Units
Units
mW
mΩ
mA
nC
kΩ
μA
nF
nF
nF
ns
ns
ns
ns
%
Ω
Ω
Ω
K
3