CM1000DXL-24S Powerex Inc, CM1000DXL-24S Datasheet - Page 2

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CM1000DXL-24S

Manufacturer Part Number
CM1000DXL-24S
Description
Manufacturer
Powerex Inc
Type
Dualr
Datasheet

Specifications of CM1000DXL-24S

Prx Availability
RequestQuote
Voltage
1200V
Current
1000A
Circuit Configuration
Dual
Rohs Compliant
Yes
Recommended Gate Driver
VLA500-01

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM1000DXL-24S
Manufacturer:
MITSUBISHI
Quantity:
1 000
2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1000DXL-24S
Dual IGBTMOD™ NX-S Series Module
1000 Amperes/1200 Volts
Absolute Maximum Ratings, T
Inverter Part IGBT/FWDi
Characteristics
Collector-Emitter Voltage (V
Gate-Emitter Voltage (V
Collector Current (DC, T
Collector Current (Pulse, Repetitive)
Total Power Dissipation (T
Emitter Current (T
Emitter Current (Pulse, Repetitive)
Module
Characteristics
Maximum Junction Temperature
Maximum Case Temperature
Operating Junction Temperature
Storage Temperature
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute)
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
*2 Case temperature (T
*3 Pulse width and repetition rate should be such that device junction temperature (T
*4 Junction temperature (T
*11 This module has 1000A size IGBT and FWDi chips. This limitation is based on the terminal design.
diode (FWDi).
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
does not exceed T
temperature (T
j(max)
j(max)
C
C
) rating.
) and heatsink temperature (T
= 25°C)
j
) should not increase beyond maximum junction
rating.
CE
C
C
= 124°C)
= 0V)
GE
*2,*4,*11
= 25°C)
*2
= 0V)
*3
*2,*11
*3
*2,*4
j
= 25°C unless otherwise specified
s
) is measured on the surface
j
)
20.9
32.6
46.0
72.6
73.6
86.0
87.0
0
LABEL SIDE
T
Symbol
Symbol
T
I
V
V
ERM
T
I
C(max)
V
j(max)
T
CRM
P
I
CES
GES
j(op)
I
E
ISO
stg
C
tot
*1
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
*1
98.6
Di1
Tr1
94.0
Di2
Tr2
83.8
81.8
Di1
Th
Tr1
79.2
Di2
Tr2
57.6 42.2
Di1
Tr1
53.2 38.0
Di2
Tr2
-40 to +150
-40 to +125
Di1
Tr1
Di2
Tr2
Rating
Rating
1200
2000
7500
2000
2500
27.2
±20
900
900
175
125
Tr1
Di1
23.0
Di2
Tr2
0
0
0
26.4
40.0
72.2
85.8
73.2
86.8
Amperes
Amperes
Amperes
Amperes
12/11 Rev. 4
Watts
Volts
Units
Volts
Units
Volts
°C
°C
°C
°C

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