CM450DY-24S Powerex Inc, CM450DY-24S Datasheet - Page 3

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CM450DY-24S

Manufacturer Part Number
CM450DY-24S
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet

Specifications of CM450DY-24S

Voltage
1200V
Current
450A
Circuit Configuration
Dual
Rohs Compliant
Yes
Recommended Gate Driver
VLA504-01
Recommended Dc To Dc Converter
VLA106-15242
Interface Circuit Ref Design
BG2B
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM450DY-24S
Dual IGBTMOD™ S-Series Module
450 Amperes/1200 Volts
09/11 Rev. 1
Electrical Characteristics, T
Inverter Part IGBT/FWDi
Characteristics
Collector-Emitter Cutoff Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Emitter-Collector Voltage
Emitter-Collector Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-on Switching Energy per Pulse
Turn-off Switching Energy per Pulse
Reverse Recovery Energy per Pulse
Internal Lead Resistance
Internal Gate Resistance
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
*2 Case temperature (T
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
diode (FWDi).
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
C
) and heatsink temperature (T
j
= 25°C unless otherwise specified
s
) is measured on the surface
R
(Terminal)
(Terminal)
V
V
V
CC' + EE'
Symbol
(Chip)
(Chip)
V
V
CE(sat)
CE(sat)
t
t
I
I
C
Q
GE(th)
C
C
E
d(on)
d(off)
CES
GES
t
E
E
Q
EC
EC
rr
r
oes
rr
res
t
t
rr
ies
on
off
g
r
G
f
*1
*1
*1
*1
*1
V
V
V
CC
I
I
CC
CC
E
E
I
I
I
I
C
C
C
C
I
I
I
I
I
E
= 450A, V
I
E
= 450A, V
V
C
C
E
E
= 600V, I
T
= 600V, I
= 450A, V
= 450A, V
= 450A, V
= 450A, V
= 600V, I
CC
R
R
= 450A, V
= 450A, V
= 450A, V
= 450A, V
j
= 450A, V
= 450A, V
Per Switch,T
V
= 150°C, Inductive Load
V
G
G
Main Terminals-Chip,
GE
V
V
I
CE
= 600V, I
C
= 0Ω, Inductive Load
= 0Ω, Inductive Load
CE
GE
= 45mA, V
= ±15V, R
= 10V, V
Test Conditions
Per Switch
= V
= V
C
GE
GE
E
C
GE
GE
GE
GE
= 450A, V
GE
GE
= 450A, V
GE
GE
GE
GE
= 450A, V
CES
GES
= 0V, T
= 0V, T
C
= 15V, T
= 15V, T
= 15V, T
= 15V, T
C
= 0V, T
= 0V, T
= 15V, T
= 15V, T
= 0V, T
= 0V, T
= I
GE
, V
, V
= 25°C
G
CE
E
33.3
45.6
GE
CE
= 0V
j
j
= 0Ω,
= 450A,
= 150°C
= 150°C
= 10V
GE
GE
0
GE
j
j
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi
Each mark points to the center position of each chip.
j
j
j
j
j
j
= 0V
= 0V
= 125°C
= 125°C
j
j
= 25°C
= 25°C
= 125°C
= 150°C
= 125°C
= 150°C
*2
= 25°C
= 25°C
= ±15V,
= ±15V
= 15V
*5
*5
Tr2 Tr2 Tr2
Di2 Di2
*5
*5
*5
*5
*5
*5
*5
*5
*5
*5
Di2
Min.
5.4
Di1
Di1
Di1
Tr1
Tr1
Tr1
1050
2.05
2.10
54.9
48.0
32.4
1.80
1.70
1.90
1.95
1.85
1.85
1.85
1.70
1.70
1.70
Typ.
4.3
24
6
LABEL SIDE
0
Max.
21.5
21.6
35.0
48.2
48.4
2.25
2.15
0.75
2.30
2.15
800
200
600
300
300
0.5
6.6
9.0
0.7
45
1
Units
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
mA
mΩ
nC
µC
mJ
mJ
mJ
µA
nF
nF
nF
ns
ns
ns
ns
ns
3

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