IXTU4N60P IXYS, IXTU4N60P Datasheet

no-image

IXTU4N60P

Manufacturer Part Number
IXTU4N60P
Description
Manufacturer
IXYS
Datasheet

Specifications of IXTU4N60P

Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
4.0
Rds(on), Max, Tj=25°c, (?)
2
Ciss, Typ, (pf)
635
Qg, Typ, (nc)
13
Trr, Typ, (ns)
500
Pd, (w)
89
Rthjc, Max, (k/w)
1.41
Package Style
TO-251
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-220
TO-263
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
DSS
, I
D
D
D
= 250 μA
= 100μA
G
= 0.5 I
DS
= 30 Ω
= 0 V
D25
(TO-220)
GS
= 1 MΩ
DD
T
≤ V
J
= 125°C
DSS
JM
IXTA4N60P
IXTP4N60P
IXTU4N60P
IXTY4N60P
,
600
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
600
600
±30
±40
150
150
300
260
10
15
10
89
4
4
4
3
±100
Max.
5.5
2.0
50
1
V/ns
mJ
mJ
nA
μA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
Ω
g
g
TO-263 (IXTA)
TO-220 (IXTP)
TO-251 (IXTU)
TO-252 (IXTY)
Features
Advantages
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
D25
DS(on)
G = Gate
S = Source
DSS
G
D
G
S
D
G
≤ ≤ ≤ ≤ ≤
= 600
=
S
G
S
S
2.0
D = Drain
TAB = Drain
4
DS99423E(04/06)
(TAB)
(TAB)
(TAB)
(TAB)
Ω Ω Ω Ω Ω
A
V

Related parts for IXTU4N60P

IXTU4N60P Summary of contents

Page 1

... V DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P Maximum Ratings 600 = 1 MΩ 600 GS ±30 ± 150 ≤ ...

Page 2

... L1 1.91 2.28 .075 .090 L2 0.89 1.27 .035 .050 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P TO-263 (IXTA) Outline Max 1.41°C/W °C/W Max. TO-220 (IXTP) Outline 1 Pins Gate ...

Page 3

... D 4.5 4 º 125 C J 3.5 3 2.5 2 1.5 1 º 0 -50 IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P º 10V Volts D S Fig Norm alized to 0.5 I DS(on ) Value vs. Junction Tem perature V = 10V ...

Page 4

... 0.8 0.9 1 10.00 C iss 1.00 C oss 0.10 C rss 0. 0.01 IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P Fig. 8. Transconductance º - º º 125 Amperes D Fig. 10. Gate Charge V = 300V 10mA ...

Page 5

... D 5.97 6.22 0.235 0.245 D1 4.32 5.21 0.170 0.205 E 6.35 6.73 0.250 0.265 E1 4.32 5.21 0.170 0.205 e 2.28 BSC 0.090 BSC e1 4.57 BSC 0.180 BSC H 9.40 10.42 0.370 0.410 L 0.51 1.02 0.020 0.040 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 2.54 2.92 0.100 0.115 IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P 100 1000 ...

Related keywords