AP9973GS Advanced Power Electronics Corp., AP9973GS Datasheet - Page 3

• Manufacturer Part Number: AP9973GS
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9973GS

• Vds: 60V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 80
• Rds(on) / Max(m?) Vgs@4.5v: 100
• Qg (nc): 8
• Qgs (nc): 3
• Qgd (nc): 4
• Id(a): 14
• Pd(w): 27
• Configuration: Single N
• Package: TO-263

90
85
80
75
70
65
14
12
10
45
40
35
30
25
20
15
10
5
0
8
6
4
2
0
Fig 3. On-Resistance v.s. Gate Voltage
0
3
0
Fig 1. Typical Output Characteristics
Fig 5. Forward Characteristic of
T
C
=25
0.2
V
1
V
V
Reverse Diode
GS
T
DS
SD
o
C
j
5
, Gate-to-Source Voltage (V)
=150
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
0.4
2
o
C
0.6
3
7
0.8
4
T
1
I
C
D
T
9
=25
= 9 A
j
=25
V
5
o
1.2
G
C
o
=3.0V
C
7.0V
5.0V
4.5V
10V
1.4
11
6
2.5
2.0
1.5
1.0
0.5
0.0
2.5
1.5
0.5
32
28
24
20
16
12
8
4
0
2
1
0
Fig 6. Gate Threshold Voltage v.s.
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
T
I
V
C
D
G
=150
=9A
T
=10V
1
j
V
Junction Temperature
v.s. Junction Temperature
, Junction Temperature (
T
DS
o
j
C
0
0
,Junction Temperature (
, Drain-to-Source Voltage (V)
2
2.01E+08
3
50
50
4
AP9973GS/P
o
C)
5
100
100
o
C)
V
G
6
7.0V
5.0V
4.5V
10V
=3.0V
150
150
7
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