AP4800AGM Advanced Power Electronics Corp., AP4800AGM Datasheet - Page 4

• Manufacturer Part Number: AP4800AGM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4800AGM

• Vds: 30V
• Vgs: ±25V
• Rds(on) / Max(m?) Vgs@10v: 18
• Rds(on) / Max(m?) Vgs@4.5v: 28
• Qg (nc): 11.4
• Qgs (nc): 2
• Qgd (nc): 6.4
• Id(a): 9.6
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

AP4800AGM
0.01
100
0.1
12
10
10
8
6
4
2
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
10%
I
90%
V
D
Single Pulse
V
= 9 A
T
GS
DS
A
=25
V
5
Q
o
DS
t
C
G
d(on)
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
1
V
t
DS
10
r
= 15 V
15
10
t
d(off)
20
t
f
100us
1ms
10ms
100ms
1s
DC
100
25
Fig 10. Effective Transient Thermal Impedance
1000
0.01
100
0.1
1
0.0001
Fig 8. Typical Capacitance Characteristics
1
4.5V
Fig 12. Gate Charge Waveform
0.05
0.02
Duty factor=0.5
0.1
V
0.01
0.2
Single Pulse
0.001
G
5
Q
V
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
0.1
Q
13
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
R
10
21
thia
=125 ℃/W
j
= P
t
f=1.0MHz
DM
T
x R
100
25
thja
C
C
Q
+ T
C
oss
rss
a
iss
1000
29
4