AP42T03GP Advanced Power Electronics Corp., AP42T03GP Datasheet - Page 3

• Manufacturer Part Number: AP42T03GP
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP42T03GP

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 22
• Rds(on) / Max(m?) Vgs@4.5v: 35
• Qg (nc): 8
• Qgs (nc): 2.5
• Qgd (nc): 4.5
• Id(a): 30
• Pd(w): 37.8
• Configuration: Single N
• Package: TO-220

100
80
60
40
20
32
28
24
20
16
12
20
16
12
0
8
8
4
0
0.0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
=25
V
Reverse Diode
1.0
T
o
V
DS
j
C
V
=150
0.4
4
SD
GS
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
o
C
2.0
0.8
6
T
I
3.0
C
D
=25
=14A
T
j
=25
℃
1.2
8
o
C
4.0
V
G
= 4. 0V
5.0V
7.0V
6.0V
10V
5.0
1.6
10
2.0
1.4
0.8
0.2
1.6
1.2
0.8
0.4
0.0
80
60
40
20
0
0.0
Fig 4. Normalized On-Resistance
-50
-50
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
T
C
V
I
=150
D
G
=18A
v.s. Junction Temperature
=10V
V
Junction Temperature
T
o
DS
2.0
j
C
T
0
0
, Junction Temperature (
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
4.0
50
50
AP42T03GP
6.0
100
100
o
C )
o
V
C)
G
=4.0V
7.0V
6.0V
5.0V
10V
150
8.0
150
3