ST7LIT10BY0 STMicroelectronics, ST7LIT10BY0 Datasheet - Page 113
ST7LIT10BY0
Manufacturer Part Number
ST7LIT10BY0
Description
8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, 5 TIMERS, SPI
Manufacturer
STMicroelectronics
Datasheet
1.ST7LIT10BF0.pdf
(159 pages)
Specifications of ST7LIT10BY0
Up To 4 Kbytes Single Voltage Extended Flash (xflash) Program Memory With Read-out Protection, In-circuit Programming And In-application Programming (icp And Iap). 10k Write/erase Cycles Guaranteed, Data Retention
20 years at 55˚C.
128 Bytes Data Eeprom With Read-out Protection. 300k Write/erase Cycles Guaranteed, Data Retention
20 years at 55˚C.
Clock Sources
Internal 1% RC oscillator (on ST7FLITE15B and ST7FLITE19B), crystal/ceramic resonator or external clock
Five Power Saving Modes
Halt, Active-Halt, Auto Wake-up from Halt, Wait and Slow
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13.3.3 Operating Conditions with Low Voltage Detector (LVD)
13.3.3.1 Operating Conditions with LVD at T
Notes:
1. The V
2. Use of LVD with capacitive power supply: with this type of power supply, if power cuts occur in the application, it is rec-
ommended to pull V
page 136
V
V
V
Vt
t
I
g(VDD)
DD(LVD
Symbol
IT+
IT-
hys
POR
(LVD)
(LVD)
DD
)
and note 4.
rise time rate condition is needed to insure a correct device power-on and LVD reset. Not tested in production.
Reset release threshold
(V
Reset generation threshold
(V
LVD voltage threshold hysteresis
V
Filtered glitch delay on V
LVD/AVD current consumption
DD
DD
DD
rise time rate
rise)
fall)
DD
down to 0V to ensure optimum restart conditions. Refer to circuit example in
Parameter
1)2)
DD
1)
High Threshold
Med. Threshold
Low Threshold
High Threshold
Med. Threshold
Low Threshold
V
Not detected by the LVD
IT+
A
(LVD)
= -40 to 125°C, unless otherwise specified
Conditions
-V
IT-
(LVD)
Min
3.80
3.20
2.65
3.70
3.10
2.50
Typ
4.20
3.55
2.85
4.00
3.35
2.70
200
150
200
ST7LITE1xB
Max
4.60
3.90
3.10
4.35
3.70
2.90
100
Figure 106 on
113/159
ms/V
Unit
mV
µA
ns
V
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