STM8S207S8 STMicroelectronics, STM8S207S8 Datasheet - Page 69
STM8S207S8
Manufacturer Part Number
STM8S207S8
Description
Performance line, 24 MHz STM8S 8-bit MCU, up to 128 Kbytes Flash, integrated EEPROM
Manufacturer
STMicroelectronics
Datasheet
1.STM8S207M8.pdf
(103 pages)
Specifications of STM8S207S8
Max Fcpu
up to 24 MHz, 0 wait states @ fCPU≤ 16 MHz
Program
up to 128 Kbytes Flash; data retention 20 years at 55 °C after 10 kcycles
Data
up to 2 Kbytes true data EEPROM; endurance 300 kcycles
Ram
up to 6 Kbytes
Advanced Control Timer
16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization
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STM8S207xx, STM8S208xx
10.3.6
Table 37.
1. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested in production.
2. Data based on characterization results, not tested in production.
3. Guaranteed by design.
Symbol
I
I
lkg ana
t
lkg(inj)
V
R
R
V
V
I
lkg
hys
, t
IH
pu
IL
F
Input low level
voltage
Input high level
voltage
Hysteresis
Pull-up resistor
Rise and fall time
(10% - 90%)
Input leakage
current,
analog and digital
Analog input
leakage current
Leakage current in
adjacent I/O
I/O port pin characteristics
General characteristics
Subject to general operating conditions for V
unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or
an external pull-up or pull-down resistor.
I/O static characteristics
Parameter
(1)
(2)
V
V
Fast I/Os
Load = 50 pF
Standard and high sink I/Os
Load = 50 pF
Fast I/Os
Load = 20 pF
Standard and high sink I/Os
Load = 20 pF
V
V
Injection current ±4 mA
DD
DD
SS
SS
≤
≤
= 5 V
= 5 V, V
V
V
Conditions
IN
IN
≤
≤
IN
V
V
Doc ID 14733 Rev 12
DD
= V
DD
SS
DD
0.7 x V
and T
Min
-0.3
30
DD
A
unless otherwise specified. All
Typ
700
55
Electrical characteristics
V
0.3 x V
DD
±250
125
125
20
±1
35
Max
+ 0.3 V
80
±1
(3)
(2)
(2)
(3)
(2)
(2)
DD
Unit
mV
kΩ
µA
nA
µA
ns
V
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