MCP6567T-E/SN Microchip Technology, MCP6567T-E/SN Datasheet - Page 4

• Manufacturer Part Number: MCP6567T-E/SN
• Description: IC COMP DUAL 1.8V OD 8-SOIC
• Manufacturer: Microchip Technology
• Type: General Purposer

Specifications of MCP6567T-E/SN

• Number Of Elements: 2
• Output Type: CMOS, Open-Drain
• Voltage - Supply: 1.8 V ~ 5.5 V
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MCP6567T-E/SNTR

MCP6566/6R/6U/7/9
DC CHARACTERISTICS (CONTINUED)
AC CHARACTERISTICS
TEMPERATURE SPECIFICATIONS
DS22143C-page 4
Electrical Characteristics: Unless otherwise indicated: V
and R
Push-Pull Output
Pull-up Voltage
High Level Output Voltage
High Level Output Current leakage
Low Level Output Voltage
Short Circuit Current
Output Pin Capacitance
Note 1:
Electrical Characteristics: Unless otherwise indicated,: Unless otherwise indicated,: V
T
Propagation Delay
High-to-Low,100 mV Overdrive
Output
Fall Time
Maximum Toggle Frequency
Input Voltage Noise
Note 1:
Electrical Characteristics: Unless otherwise indicated: V
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, SC70-5
Thermal Resistance, SOT-23-5
Thermal Resistance, 8L-MSOP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
A
= +25°C, V
Pull-Up
2:
3:
4:
2:
The input offset voltage is the center of the input-referred trip points. The input hysteresis is the difference between the
input-referred trip points.
V
Limit the output current to Absolute Maximum Rating of 50 mA.
The pull-up voltage for the open drain output V
case, I
ENI is based on SPICE simulation.
Rise time t
= 20 k to V
Parameters
HYST
IN+
Parameters
Parameters
= V
OH_leak
at different temperatures is estimated using V
(Notes
DD
R
/2, V
and t
PU
can be higher than 1 µA (see
= V
3)
IN-
PLH
DD
= V
depend on the load (R
(see
SS
, R
Figure
V
Pull-Up
Symbol
I
PULL_UP
OH_leak
C
V
V
I
OUT
OH
SC
OL
1-1).
= 20 k to V
Symbol
Symbol






t
f
E
T
T
T
PHL
TG
t
JA
JA
JA
JA
JA
JA
F
A
A
A
NI
Min
1.6
—
—
—
—
—
Figure
L
DD
and C
PULL_UP
PU
= +1.8V to +5.5V, V
Min
—
—
—
—
—
—
= V
Min
2-30).
-40
-40
-65
L
—
—
—
—
—
—
Typ
±30
HYST
—
—
—
—
). These specification are valid for the specified load only.
DD
8
DD
can be as high as the absolute maximum rating of 10.5V. In this
= +1.8V to +5.5V and V
, and C
(T
Typ
350
56
34
20
V
4
2
A
220.7
149.5
PULL_UP
95.3
) = V
Typ
331
100
211
Max
5.5
0.6
—
—
—
—
—
1
L
= 25 pf (see
HYST @ +25°C
Max
80
80
—
—
—
—
SS
= GND, T
+125
+125
+150
Units
Max
mA
µA
—
—
—
—
—
—
pF
V
V
V
Units
µV
DD
MHz
MHz
ns
ns
ns
P
= +1.8V to +5.5V, V
Figure
-
+ (T
P
(see
Note 4
I
Not to exceed Absolute Max. Rating
A
OUT
= +25°C, V
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
A
V
V
V
V
10 Hz to 10 MHz
SS
°C
°C
°C
CM
CM
DD
DD
Figure
 2011 Microchip Technology Inc.
= 3 mA/8 mA @ V
- 25°C) TC
1-1).
= GND.
= V
= V
= 5.5V
= 1.8V
DD
DD
1-1)
Conditions
IN
/2, V
/2, V
Conditions
+ = V
1
(Notes
+ (T
SS
DD
DD
Conditions
(Note
= GND,
DD
A
= 1.8V
= 5.5V
DD
- 25°C)
/2, V
3, 4)
= 1.8V/5.5V
1)
IN
- = V
2
TC
SS
2
.
,