PMN49EN NXP Semiconductors, PMN49EN Datasheet - Page 6

• Manufacturer Part Number: PMN49EN
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMN49EN_1
Product data sheet
Fig 5. Output characteristics: drain current as a
Fig 7. Transfer characteristics: drain current as a
(A)
I
(A)
D
7.5
2.5
I
10
D
10
5
0
8
5
3
0
T
function of drain-source voltage; typical values
function of gate-source voltage; typical values
0
j
0
= 25 C
V
DS
> I
D
x R
0.25
T
1
DSon
j
= 150 C
10
6
0.5
5 4.5
2
4
0.75
V
25 C
3
GS
(V) =
003aab600
V
003aab598
V
GS
DS
(V)
3.5
(V)
3
1
4
Rev. 01 — 13 April 2007
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R
(m )
DSon
a
200
150
100
50
3
2
1
0
0
T
of drain current; typical values
factor as a function of junction temperature
-60
a
j
0
= 25 C
=
----------------------------- -
R
DSon 25 C
R
N-channel TrenchMOS logic level FET
DSon
2.5
0
3
60
5
V
PMN49EN
GS
120
7.5
(V) =
© NXP B.V. 2007. All rights reserved.
003aab599
T
I
D
j
( C)
(A)
03al52
3.5
4.5
10
4
180
10
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