PMK35EP NXP Semiconductors, PMK35EP Datasheet - Page 6

• Manufacturer Part Number: PMK35EP
• Description: Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMK35EP
Product data sheet
Fig 7.
Fig 9.
V
GS(th)
(V)
a
1.5
0.5
−4
−3
−2
−1
0
2
1
0
−60
−60
junction temperature
factor as a function of junction temperature
I
Gate-source threshold voltage as a function of
Normalized drain-source on-state resistance
D
= -1 mA; V
0
0
DS
= V
max.
min.
GS
60
60
typ.
120
120
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003aab613
T
003aab614
T
j
j
(°C)
(°C)
180
180
Rev. 02 — 29 April 2010
Fig 8.
Fig 10. Drain-source on-state resistance as a function
R
(mΩ)
−10
−10
−10
−10
DSon
(A)
I
P-channel TrenchMOS extremely low level FET
D
100
75
50
25
−3
−4
−5
−6
0
gate-source voltage
of drain current; typical values
T
Sub-threshold drain current as a function of
T
0
0
j
j
= 25 °C; V
= 25 °C
V
GS
−1
min.
(V) = −3
DS
−10
= -5 V
−2
typ.
−20
−3.5
PMK35EP
−3
max.
© NXP B.V. 2010. All rights reserved.
I
D
V
003aab612
003aab607
GS
(A)
−4.5
(V)
−4
−5
−30
−4
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