PHP30NQ15T NXP Semiconductors, PHP30NQ15T Datasheet - Page 7

• Manufacturer Part Number: PHP30NQ15T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHP30NQ15T_3
Product data sheet
Fig 10. Forward transconductance as a function of
Fig 12. Normalized drain-source on-state resistance
g
(S)
fs
a
1.8
1.6
2.4
2.2
2.0
1.4
1.2
0.8
0.6
3.0
2.8
2.6
1.0
40
35
30
25
20
15
10
5
0
drain current; typical values
factor as a function of junction temperature
0
−40
5
0
10
40
15
T
T
80
j
= 25 °C
j
= 175 °C
20
120
T
All information provided in this document is subject to legal disclaimers.
j
25
003aaa063
003aaa064
(°C)
I
D
160
(A)
30
Rev. 03 — 3 March 2010
Fig 11. Drain-source on-state resistance as a function
Fig 13. Gate-source voltage as a function of gate
R
V
(V)
DSon
(Ω)
GS
0.20
0.16
0.12
0.06
0.04
14
12
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
4.4 V
N-channel TrenchMOS standard level FET
4.6 V
4.8 V
10
5
5.0 V
10
20
5.2 V
PHP30NQ15T
15
30
V
5.4 V
DD
= 30 V
40
20
V
6.0 V
DD
V
© NXP B.V. 2010. All rights reserved.
GS
= 120 V
25
50
003aaa061
= 10 V
003aaa066
Q
8.0 V
I
G
D
(nC)
(A)
60
30
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