PHP30NQ15T NXP Semiconductors, PHP30NQ15T Datasheet - Page 6

• Manufacturer Part Number: PHP30NQ15T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHP30NQ15T_3
Product data sheet
Fig 6.
Fig 8.
V
GS(th)
(V)
I
(A)
D
4.5
3.5
2.5
1.5
0.5
35
30
25
20
15
10
4
3
2
1
0
5
0
function of drain-source voltage; typical values
−60
junction temperature
Output characteristics: drain current as a
Gate-source threshold voltage as a function of
0
−20
0.4
20
0.8
60
1.2
max
typ
min
VGS = 10 V
100
T
j
(°C)
1.6
All information provided in this document is subject to legal disclaimers.
5.4 V
5.2 V
5.0 V
4.8 V
4.6 V
4.4 V
140
6 V
003aaa023
V
003aaa057
DS
8 V
(V)
180
2.0
Rev. 03 — 3 March 2010
Fig 7.
Fig 9.
I
(A)
D
(A)
I
D
10
10
10
10
10
10
30
25
20
15
10
−2
−3
−4
−5
−6
−7
5
0
function of gate-source voltage; typical values
gate-source voltage
Transfer characteristics: drain current as a
Sub-threshold drain current as a function of
1
0
N-channel TrenchMOS standard level FET
1
min
2
T
2
j
= 175 °C
3
4
PHP30NQ15T
3
5
typ
T
j
6
= 25 °C
7
4
© NXP B.V. 2010. All rights reserved.
V
V
max
GS
GS
8
003aaa024
003aaa062
(V)
(V)
9
10
5
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