BSS192 NXP Semiconductors, BSS192 Datasheet - Page 6
![Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology](/photos/41/52/415269/sot089_3d_sml.gif)
BSS192
Manufacturer Part Number
BSS192
Description
Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BSS192.pdf
(12 pages)
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Philips Semiconductors
2002 May 22
handbook, halfpage
P-channel enhancement mode
vertical D-MOS transistor
I
Fig.10 Temperature coefficient of drain-source
k
D
= 200 mA; V
=
2.5
k
1.5
0.5
---------------------------------------- -
R
2
1
0
DSon
R
50
DSon
on-state resistance; typical values.
at 25 C
at T
GS
j
= 10 V.
0
50
100
T j (
MDA181
o
C)
150
6
Product specification
BSS192