BSH103 NXP Semiconductors, BSH103 Datasheet - Page 7

• Manufacturer Part Number: BSH103
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
1998 Feb 11
handbook, halfpage
handbook, halfpage
N-channel enhancement mode
MOS transistor
V
Fig.8
V
(1) T
(2) T
(3) T
Fig.10 Source current as a function of source-drain
DS
GD
(A)
= 10 V; T
I S
(A)
= 0.
I D
1.6
1.2
0.8
0.4
amb
amb
amb
4
3
2
1
0
2
0
0
0
= 150 C.
= 25 C.
= 65 C.
Transfer characteristic; typical values.
diode forward voltage; typical values.
amb
= 25 C; t
0.4
1
p
= 300 s;
(1)
= 0.
(2)
0.8
2
(3)
V GS (V)
V SD (V)
MBK506
MBK508
1.2
3
7
handbook, halfpage
handbook, halfpage
Fig.11 Drain-source on-state resistance as a function
V
Fig.9
T
(1) I
(2) I
(3) I
amb
GS
R DSon
(pF)
( )
10
300
200
100
= 0 ; f = 1 MHz; T
C
D
D
D
= 25 C; t
10
0
= 0.1 A.
= 0.22 A.
= 0.45 A.
1
1
0
0
of gate-source voltage; typical values.
Capacitance as a function of drain-source
voltage; typical values.
(1)
p
(2)
= 300 s;
(3)
2
(4)
(5)
amb
(6)
10
= 25 C.
= 0.
4
6
(4) I
(5) I
(6) I
20
Product specification
D
D
D
= 0.9 A.
= 1.8 A.
= 3.6 A.
V DS (V)
8
V GS (V)
BSH103
C oss
C iss
C rss
MBK504
MBK509
30
10