BAS86 NXP Semiconductors, BAS86 Datasheet - Page 3

Planar Schottky barrier diode with an integrated guard ring against static discharges

BAS86

Manufacturer Part Number
BAS86
Description
Planar Schottky barrier diode with an integrated guard ring against static discharges
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BAS86
Product data sheet
Table 6.
[1]
Table 7.
T
[1]
[2]
Symbol
R
Symbol
V
I
t
C
R
rr
amb
F
th(j-a)
d
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Pulse test: t
When switched from I
= 25
°
C unless otherwise specified.
Parameter
forward voltage
reverse current
reverse recovery
time
diode capacitance
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to ambient
p
≤ 300 μs; δ ≤ 0.02.
All information provided in this document is subject to legal disclaimers.
F
Rev. 4 — 8 September 2010
= 10 mA to I
V
Conditions
I
I
I
I
I
V
F
F
F
F
F
R
R
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
R
= 40 V
= 1 V; f = 1 MHz
= 10 mA; R
Conditions
in free air
L
= 100 Ω; measured at I
[1]
[1]
[2]
Min
-
Min
-
-
-
-
-
-
-
-
R
= 1 mA.
Schottky barrier diode
Typ
-
Typ
-
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
BAS86
Max
320
Max
300
380
450
600
900
5
4
8
Unit
K/W
3 of 10
Unit
mV
mV
mV
mV
mV
μA
ns
pF

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