BT137B-800 NXP Semiconductors, BT137B-800 Datasheet - Page 2
![Planar passivated four quadrant triac in a SOT404 (DPAK) surface-mountable plastic package intended for use in bidirectional switching and phase control applications](/photos/41/50/415039/sot404_3d_sml.gif)
BT137B-800
Manufacturer Part Number
BT137B-800
Description
Planar passivated four quadrant triac in a SOT404 (DPAK) surface-mountable plastic package intended for use in bidirectional switching and phase control applications
Manufacturer
NXP Semiconductors
Datasheet
1.BT137B-800.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BT137B-800
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BT137B-800F
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BT137B-800G
Manufacturer:
MSTAR
Quantity:
3 410
Part Number:
BT137B-800G
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1;3 Semiconductors
GENERAL DESCRIPTION
Passivated triacs in a plastic envelope
suitable for surface mounting, intended
for use in applications requiring high
bidirectional transient and blocking
voltage capability and high thermal
cycling
applications include
industrial and domestic lighting, heating
and static switching.
PINNING - SOT404
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/μs.
June 2001
Triacs
SYMBOL PARAMETER
V
I
I
I
dI
I
V
P
P
T
T
T(RMS)
TSM
2
GM
PIN
mb
DRM
t
GM
GM
G(AV)
stg
j
T
1
2
3
/dt
main terminal 1
main terminal 2
gate
main terminal 2
performance.
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
DESCRIPTION
t for fusing
motor
control,
Typical
PIN CONFIGURATION
CONDITIONS
full sine wave; T
full sine wave; T
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
dI
over any 20 ms period
TM
G
QUICK REFERENCE DATA
/dt = 0.2 A/μs
= 12 A; I
SYMBOL
V
I
I
T(RMS)
TSM
DRM
1
2
G
3
= 0.2 A;
1
mb
j
= 25 ˚C prior to
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
≤ 102 ˚C
mb
T2+ G+
T2+ G-
T2- G-
T2- G+
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SYMBOL
BT137B-
BT137B-
BT137B-
T2
-600
600
1
Product specification
MAX.
MAX.
600G
600F
BT137B series
150
125
600
600
0.5
65
71
21
50
50
50
10
65
8
2
5
5
8
-800
800
MAX. UNIT
800G
800F
800
800
65
8
Rev 1.400
UNIT
A/μs
A/μs
A/μs
A/μs
A
G
W
W
˚C
˚C
V
A
A
A
A
V
V
A
A
T1
2
s