BA10339FV-E2 Rohm Semiconductor, BA10339FV-E2 Datasheet - Page 19

IC COMPARATOR QUAD 18V SSOP-B14

BA10339FV-E2

Manufacturer Part Number
BA10339FV-E2
Description
IC COMPARATOR QUAD 18V SSOP-B14
Manufacturer
Rohm Semiconductor
Type
General Purposer
Datasheet

Specifications of BA10339FV-E2

Number Of Elements
4
Output Type
Open Collector
Voltage - Supply
3 V ~ 36 V, ±1.5 V ~ 18 V
Mounting Type
Surface Mount
Package / Case
14-SSOP
Number Of Channels
4 Channels
Product
Analog Comparators
Response Time
1.3 us
Offset Voltage (max)
5 mV
Input Bias Current (max)
0.25 uA
Supply Voltage (max)
36 V
Supply Voltage (min)
3 V
Supply Current (max)
2 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BA10339FV-E2
BA10339FV-E2TR

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●Derating curves
BA10393F,BA10339F,BA10339FV,BA2903SF,BA2903SFV,BA2903SFVM,BA2903F,BA2903FV,
BA2903FVM,BA2901SF,BA2901SFV,BA2901SKN,BA2901F,BA2901FV,BA2901KN,BA8391G
© 2010 ROHM Co., Ltd. All rights reserved.
www.rohm.com
Power dissipation(total loss) indicates the power that can be consumed by IC at Ta=25℃(normal temperature).IC is heated
when it consumed power, and the temperature of IC chip becomes higher than ambient temperature. The temperature that
can be accepted by IC chip depends on circuit configuration, manufacturing process, and consumable power is limited.
Power dissipation is determined by the temperature allowed in IC chip (maximum junction temperature) and thermal
resistance of package (heat dissipation capability). The maximum junction temperature is typically equal to the maximum
value in the storage temperature range. Heat generated by consumed power of IC radiates from the mold resin or lead frame
of the package. The parameter which indicates this heat dissipation capability(hardness of heat release)is called thermal
resistance, represented by the symbol θja [℃/W].The temperature of IC inside the package can be estimated by this thermal
resistance.
temperature Ta, junction temperature Tj, and power dissipation Pd can be calculated by the equation below:
Derating curve in Fig.114 (b) indicates power that can be consumed by IC with reference to ambient temperature. Power that
can be consumed by IC begins to attenuate at certain ambient temperature. This gradient iis determined by thermal
resistance θja. Thermal resistance θja depends on chip size, power consumption, package, ambient temperature, package
condition, wind velocity, etc even when the same of package is used. Thermal reduction curve indicates a reference value
measured at a specified condition. Fig.115(c) ~ (f) shows a derating curve for an example of BA8391, BA10393, BA10339,
BA2903S, BA2903, BA2901S, and BA2901.
When using the unit above Ta=25[℃], subtract the value above per degree[℃].
Permissible dissipation is the value when FR4 glass epoxy board 70[mm] ×70[mm] ×1.6[mm] (cooper foil area below 3[%]) is mounted.
(*16)
6.2
Chip surface temperature
Ambient temperature
Power dissipation
(a) Thermal resistance
θja = ( Tj ー Ta ) / Pd [ ℃ /W]
θja = (Tj-Ta) / Pd
1000
Fig.114 (a) shows the model of thermal resistance of the package. Thermal resistance θja, ambient
800
600
400
200
1000
800
600
400
200
(*17)
0
7.0
0
0
チ ップ 表面温度 Tj [ ℃ ]
消費電力 P [W]
620mW(
0
780mW(
690mW(
590mW(
周囲温度 Ta [ ℃ ]
(c)BA10393 family
Ambient Temperature [℃]
Ambient Temperature [℃]
25
(e)BA2903 family
16)
25
19)
21)
20)
周囲温度 Ta  [°C]
周囲温度 Ta  [°C]
50
(*18)
4.9
BA2903F
50
BA2903SFVM
BA2903SFV
BA10393F
Fig.114 Thermal resistance and derating curve
BA2903FV
75
BA2903FVM
75
[℃/W]
100
105
(*19)
100
6.2
125
BA2903SF
125
150
Fig.115 Derating curve
・・・・・ (Ⅰ)
(*20)
5.5
Power dissipation of LSI
19/24
LSI の 消 費 電 力 [W]
P2
P1
(*21)
1000
1000
1000
4.7
0
800
600
400
200
800
800
600
600
400
400
200
200
Pd (max)
0
0
0
0
0
0
490mW(
700mW(
660mW(
610mW(
870mW(
Ambient temperature
(b) Derating curve
25
Ambient Temperature [℃]
Ambient Temperature [℃]
(d)BA10339 family
25
(f)BA2901 family
18)
17)
25
23)
24)
25
22)
周囲温度 Ta  [°C]
周囲温度 Ta  [°C]
(*22)
7.0
50
50
θ' ja1
50
50
BA2901SKN
BA2901SF
周 囲 温 度 Ta [ ℃ ]
BA10339FV
BA2901FV
BA2901KN
75
75
BA10339F
θ ja1
75
75
θja2 < θja1
100
BA2901F
(*23)
θ' ja2
105
5.3
100
100
100
BA2901SFV
125
θ ja2
150
125
125
125
Tj ' (max)
(*24)
4.9
150
Technical Note
2010.12 - Rev.A
Tj (max)
[mW/℃]
Unit

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