2MBI150S-120 Fuji Electric holdings CO.,Ltd, 2MBI150S-120 Datasheet

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2MBI150S-120

Manufacturer Part Number
2MBI150S-120
Description
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2MBI150S-120
Manufacturer:
FUJI
Quantity:
1 000
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
*
Screw Torque
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
Thermal Resistance
IGBT MODULE ( S-Series )
• NPT-Technology
• Square SC SOA at 10 x I
• High Short Circuit Withstand-Capability
• Small Temperature Dependence of the Turn-Off
• Low Losses And Soft Switching
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
1
Absolute Maximum Ratings
Electrical Characteristics
Thermal Characteristics
Switching Loss
Maximum Ratings and Characteristics
Features
Applications
Note: 1*: All Terminals should be connected together when isolation test will be done.
2*: Recommendable Value; Mounting 2.5
Items
Items
Continuous
1ms
Continuous
1ms
Items
A.C. 1min.
25°C / 80°C
25°C / 80°C
C
( at T
2MBI 150S-120
( T
Symbols
Symbols
j
=25°C )
I
I
V
V
C
C
C
t
t
t
t
t
V
t
c
R
R
R
3.5 Nm (M5 or M6), Terminal 3.5~4.5 (M6)
CES
GES
ON
r,x
r,i
OFF
f
rr
=25°C
GE(th)
CE(sat)
F
ies
oes
res
th(c-f)
th(j-c)
th(j-c)
Terminals *
Mounting *
Symbols
-I
-I
)
P
T
V
V
I
I
T
V
C
C PULSE
C
C PULSE
j
stg
CES
GES
C
is
V
V
V
V
V
V
f=1MHz
V
I
V
R
Inductive Load
I
I
C
F
F
IGBT
Diode
With Thermal Compound
GE
CE
GE
GE
GE
CE
CC
GE
G
=150A; V
=150A
2
2
=0V V
=10V
=0V V
=20V I
=15V I
=0V
= 600V
= 150A
=
= 5.6
-40
15V
200 / 150
400 / 300
Ratings
1200
1000
+150
2500
CE
GE
C
C
150
300
GE
3.5
4.5
Test Conditions
=150mA
=150A
Test Conditions
20
=1200V
= 20V
=0V
+125
Units
Nm
°C
W
V
A
V
T
T
T
T
Outline Drawing
j
j
j
j
= 25°C
=125°C
= 25°C
=125°C
Equivalent Circuit
Min.
Min.
5.5
18’000
0.025
Typ.
3’750
3’300
0.35
0.25
0.10
0.45
0.08
Typ.
7.2
2.3
2.8
2.3
2.0
2-Pack IGBT
MS5F 4953 2001-02-21
0.125
0.260
Max.
Max.
400
350
2.0
8.5
2.6
1.2
0.6
1.0
0.3
3.0
2x150A
1200V
Units
Units
°C/W
mA
nA
pF
µs
ns
V
V

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2MBI150S-120 Summary of contents

Page 1

IGBT MODULE ( S-Series ) Features • NPT-Technology • Square SC SOA • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off Switching Loss • Low Losses And Soft Switching Applications ...

Page 2

IGBT 1200V 2x150A ...

Page 3

IGBT 1200V 2x150A ...

Page 4

IGBT 1200V 2x150A ...

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