123NQ100PBF Vishay Semiconductors, 123NQ100PBF Datasheet

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123NQ100PBF

Manufacturer Part Number
123NQ100PBF
Description
Manufacturer
Vishay Semiconductors
Datasheet
Document Number: 94129
Revision: 28-Apr-08
PRODUCT SUMMARY
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
V
I
V
T
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
F(AV)
FSM
RRM
F
J
HALF-PAK (D-67)
I
F(AV)
V
R
Rectangular waveform
t
120 Apk, T
Range
p
= 5 µs sine
SYMBOL
For technical questions, contact: ind-modules@vishay.com
I
I
F(AV)
E
J
FSM
I
AR
Lug terminal
CHARACTERISTICS
AS
Schottky Rectifier, 120 A
= 125 °C
cathode
anode
120 A
100 V
Base
50 % duty cycle at T
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
T
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
= 25 °C, I
SYMBOL
V
AS
V
RWM
R
= 5.5 A, L = 1 mH
TEST CONDITIONS
C
= 133 °C, rectangular waveform
FEATURES
• 175 °C T
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
• Lead (Pb)-free
• Designed and qualified for industrial level
DESCRIPTION
The 123NQ.. high current Schottky rectifier module series
has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows
for reliable operation up to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling
protection.
J
maximum V
reliability
Following any rated
load condition and with
rated V
J
operation
A
123NQ100PbF
= 1.5 x V
Vishay High Power Products
diodes,
RRM
- 55 to 175
100
VALUES
12 800
0.73
120
100
applied
R
typical
welding,
123NQ100PbF
VALUES
12 800
and
1800
120
15
1
reverse
UNITS
www.vishay.com
V
UNITS
°C
A
V
A
V
UNITS
mJ
A
A
A
RoHS
COMPLIANT
battery
1

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123NQ100PBF Summary of contents

Page 1

... For technical questions, contact: ind-modules@vishay.com 123NQ100PbF Vishay High Power Products operation J diodes, welding, and reverse VALUES UNITS 120 100 12 800 0. 175 123NQ100PbF UNITS 100 V VALUES 120 Following any rated 12 800 load condition and with 1800 rated V applied RRM 1 typical ...

Page 2

... Vishay High Power Products ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop See fig. 1 Maximum reverse leakage current See fig. 2 Maximum junction capacitance Typical series inductance Maximum voltage rate of change Note (1) Pulse width = 500 µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage ...

Page 3

... Reverse Voltage (V) R Fig Typical Junction Capacitance vs. Reverse Voltage 0.20 0.001 0. Rectangular Pulse Duration (s) 1 Fig Maximum Thermal Impedance Z For technical questions, contact: ind-modules@vishay.com 123NQ100PbF Vishay High Power Products 1000 T = 175 °C J 100 T = 150 ° 125 ° 100 °C ...

Page 4

... Vishay High Power Products 180 170 160 150 140 Square wave (D = 0.50) 130 80 % rated V applied R 120 110 See note (1) 100 Average Forward Current (A) F(AV) Fig Maximum Allowable Case Temperature vs. Average Forward Current D.U.T. Current monitor Note (1) Formula used ( ...

Page 5

... PbF Average current rating (x 10 Product silicon identification Not isolated Schottky rectifier diode 5 - Voltage rating (100 = 100 Lead (Pb)-free LINKS TO RELATED DOCUMENTS For technical questions, contact: ind-modules@vishay.com 123NQ100PbF Vishay High Power Products 6 http://www.vishay.com/doc?95020 www.vishay.com 5 ...

Page 6

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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