LM4832M/NOPB National Semiconductor, LM4832M/NOPB Datasheet - Page 3

IC AMP AUDIO PWR .25W AB 28SOIC

LM4832M/NOPB

Manufacturer Part Number
LM4832M/NOPB
Description
IC AMP AUDIO PWR .25W AB 28SOIC
Manufacturer
National Semiconductor
Series
Boomer®r
Type
Class ABr
Datasheet

Specifications of LM4832M/NOPB

Output Type
2-Channel (Stereo)
Max Output Power X Channels @ Load
250mW x 2 @ 8 Ohm
Voltage - Supply
4.5 V ~ 5.5 V
Features
3D, Depop, I²C, Microphone, Mute, Shutdown, Tone and Volume Control
Mounting Type
Surface Mount
Package / Case
28-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*LM4832M
*LM4832M/NOPB
LM4832M
P
THD+N
PSRR
A
X
MICROPHONE PREAMP AND VOLUME CONTROL
A
A
A
V
E
PSRR
A
X
THD+N
I
f
T
T
T
T
T
I
V
2
MAX
2
START:HOLD
D;SETUP
C;HIGH
C;LOW
STOP;SETUP
O
M
TALK
V
R
S
SWING
NO
M
TALK
C BUS TIMING
C BUS INPUT AND OUTPUT
IL
Electrical Characteristics for Entire IC
The following specifications apply for V
Symbol
Output Power
Total Harmonic Distortion+Noise
Power Supply Rejection Ratio
Mute Attenuation
Cross Talk
Preamp Gain
Attenuator Range
Step Size
Step Size Error
Output Voltage Swing
Input Referred Noise
Power Supply Rejection Ratio
Mute Attenuation
Cross Talk
Total Harmonic Distortion Plus Noise
Maximum Bus Frequency
Start Signal: Hold Time before
Clock/Data Transitions
Data Setup Time
Minimum High Clock Duration
Minimum Low Clock Duration
Stop Signal: Setup Time before
Clock/Data Transitions
Input Low Voltage
Parameter
DD
= 5V unless otherwise noted. Limits apply for T
THD = 1.0% (max), f = 1 kHz, All
controls at 0dB
R
R
All Controls at 0 dB, THD = 10%, f = 1
kHz
R
P
P
V
C
mVrms, All Controls at 0 dB Setting
f = 1 kHz, V
P
All controls at 0 dB setting,
f = 1 kHz
Left to Right
Right to Left
0 dB Gain
+20 dB Gain
+30 dB Gain
Gain at +18 dB Setting
Attenuation at −42 dB Setting
0 dB to −42 dB
f = 1 kHz, THD
A-Weighted, Attenuator at 0 dB
f = 100 Hz, V
C
Power Amp P
All controls at 0 dB, f = 1 kHz, V
0 dB Setting
+20 dB Gain
+30 dB Gain
O
O
O
O
L
L
L
B
B
= 8Ω
= 32Ω
= 8Ω
= 200 mW, R
= 75 mW, R
= 1 Vrms, R
= 1 µF, f = 100 Hz, V
= 200 mW, R
= 1 µF
3
(Notes 1, 2) (Continued)
IN
RIPPLE
O
Conditions
= 1V
L
L
<
= 200 mW, f = 1 kHz
L
L
= 32Ω
= 10Ω
1.0%, R
= 8Ω
= 8Ω,
= 100 mVrms,
RIPPLE
L
= 1 kΩ
= 100
O
= 1V
A
= 25˚C.
(Note 6)
Typical
0.15
0.11
0.08
0.03
0.03
0.04
250
350
−75
−85
−72
−90
−90
0.4
1.7
95
45
20
30
35
0
3
7
LM4832
(Note 7)
(Note 8)
19, 21
29, 31
Limit
−1, 1
−43
400
0.6
0.1
0.6
1.3
0.6
1.5
75
20
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mW (min)
mW (min)
dB (max)
dB (max)
dB (min)
µV (min)
(Limits)
V (max)
Units
V
mW
kHz
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
µs
µs
µs
µs
µs
%
%
%
%
%
%
rms

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