SXT-289 Sirenza Microdevices, SXT-289 Datasheet

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SXT-289

Manufacturer Part Number
SXT-289
Description
Manufacturer
Sirenza Microdevices
Datasheet
1.SXT-289.pdf (9 pages)

Specifications of SXT-289

Dc
N/A
Product Description
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Sirenza Microdevices’ SXT-289 amplifier is a high efficiency
GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed
in low-cost surface-mountable plastic package. These HBT
MMICs are fabricated using molecular beam epitaxial growth
technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
These amplifiers are specially designed for use as driver
devices for infrastructure equipment in the 1800-2500 MHz
cellular, ISM, WLL and Wideband CDMA applications.
Its high linearity makes it an ideal choice for multi-carrier as
well as digital applications.
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SXT-289
1800-2500 MHz Medium Power
GaAs HBT Amplifier
Product Features
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Patented High Reliability GaAs HBT Technology
Balanced Amplifier Configuration App. Note
High Output 3rd Order Intercept : +42 dBm typ.
WLL, Wideband CDMA Systems
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PCS Systems
Surface-Mountable Power Plastic Package
ISM Systems
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SXT-289 Summary of contents

Page 1

... Product Description Sirenza Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. ...

Page 2

... Third Order Intercept vs Tone Power 25C 38 -40C 85C per tone (dBm) OUT 522 Almanor Ave., Sunnyvale, CA 94085 SXT-289 1800-2500 MHz Power Amplifier =8V, I =105mA 25C -40C 18 85C 1980 1990 1930 42 T= ...

Page 3

... Third Order Intercept vs Tone Power 25C 37 -40C 85C per tone (dBm) OUT 522 Almanor Ave., Sunnyvale, CA 94085 SXT-289 1800-2500 MHz Power Amplifier =8V, I =105mA 25C -40C 18 85C 2110 2150 2160 2170 45 T=25 ...

Page 4

... Third Order Intercept vs Tone Power 25C 38 -40C 85C per tone (dBm) OUT 522 Almanor Ave., Sunnyvale, CA 94085 SXT-289 1800-2500 MHz Power Amplifier =8V, I =105mA 25C -40C 18 85C 2480 2500 2400 Third Order Intercept vs. Frequency 46 T=25 ...

Page 5

... MHz Adjacent Channel Power vs. Channel Output Power -40 +25°C -45 +85°C -40°C -50 -55 -60 -65 -70 -75 -80 12 522 Almanor Ave., Sunnyvale, CA 94085 SXT-289 1800-2500 MHz Power Amplifier =8V, I =105mA Channel Output Power (dBm) IS-95 CDMA at 1960 MHz Phone: (800) SMI-MMIC 5 =27 Ohms BIAS 16 ...

Page 6

... The W-CDMA setup is PCCPCH+PSCH+SSCH+CPICH+PICH+64 DPCH Adjacent Channel Power vs. Channel Output Power -40 +25°C +85°C -40°C -45 -50 -55 -60 -65 11 522 Almanor Ave., Sunnyvale, CA 94085 SXT-289 1800-2500 MHz Power Amplifier =8V, I =105mA W-CDMA at 2.14 GHz Channel Output Power (dBm) W-CDMA at 2.14 GHz +9 dBm Phone: (800) SMI-MMIC ...

Page 7

... Voltage Feed Resistor Bias Circuit (for > 7V supply) Note: Circuit Optimized for Output IP3 Vs Rbias SXT-289 Z=50 Ω, EL1 Schematic RFin C1 522 Almanor Ave., Sunnyvale, CA 94085 SXT-289 1800-2500 MHz Power Amplifier Z=50 Ω, EL3 Z=50 Ω, EL2 ...

Page 8

... Z=50 Ω, EL1 C1 SXT-289 C2 Schematic C1 NOTE: Reference Application Note AN-026 for more information on Active Current Bias Circuit. 522 Almanor Ave., Sunnyvale, CA 94085 SXT-289 1800-2500 MHz Power Amplifier S m *Note: IP3 performance degraded due to lower (4.5V) device voltage. Rbias ...

Page 9

... MARKING DOT DENOTES AREA PIN 1 TOP VIEW PCB Pad Layout DIMENSIONS ARE IN INCHES [MM] 522 Almanor Ave., Sunnyvale, CA 94085 SXT-289 1800-2500 MHz Power Amplifier designator on the top surface of the package. C º ...

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