IDT71V416 Integrated Device Technology, Inc., IDT71V416 Datasheet

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IDT71V416

Manufacturer Part Number
IDT71V416
Description
Manufacturer
Integrated Device Technology, Inc.
Datasheet

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Features
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Functional Block Diagram
©2004 Integrated Device Technology, Inc.
64K x 16 advanced high-speed CMOS Static RAM
Equal access and cycle times
— Commercial: 10/12/15/20ns
— Industrial: 12/15/20ns
One Chip Select plus one Output Enable pin
Bidirectional data inputs and outputs directly
LVTTL-compatible
Low power consumption via chip deselect
Upper and Lower Byte Enable Pins
Single 2.5V power supply
Available in 44-pin Plastic SOJ, 44-pin TSOP, and 48-Ball
Plastic FBGA packages
A
0
– A
BHE
BLE
WE
OE
CS
15
Write
Enable
Buffer
Output
Enable
Buffer
Address
Buffers
Chip
Enable
Buffer
Byte
Enable
Buffers
2.5V CMOS Static RAM
1 Meg (64K x 16-Bit)
Row / Column
Decoders
64K x 16
Memory
Array
1
Description
as 64K x 16. It is fabricated using IDT’s high-perfomance, high-reliability
CMOS technology. This state-of-the-art technology, combined with inno-
vative circuit design techniques, provides a cost-effective solution for high-
speed memory needs.
5ns, with address access times as fast as 10ns. All bidirectional inputs and
outputs of the IDT71T016 are LVTTL-compatible and operation is from a
single 2.5V supply. Fully static asynchronous circuitry is used, requiring
no clocks or refresh for operation.
SOJ, 44-pin TSOP Type II, and a 48-ball plastic 7 x 7 mm FBGA.
The IDT71T016 is a 1,048,576-bit high-speed Static RAM organized
The IDT71T016 has an output enable pin which operates as fast as
The IDT71T016 is packaged in a JEDEC standard a 44-pin Plastic
16
Sense
Amps
and
Write
Drivers
8
8
Buffer
Buffer
Byte
High
Byte
Low
I/O
I/O
5326 drw 01
IDT71T016SA
APRIL 2004
8
8
DSC-5326/01
I/O
I/O
I/O
I/O
15
8
7
0

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IDT71V416 Summary of contents

Page 1

... Buffer BHE Byte Enable Buffers BLE ©2004 Integrated Device Technology, Inc. 2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) Description The IDT71T016 is a 1,048,576-bit high-speed Static RAM organized as 64K x 16 fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with inno- vative circuit design techniques, provides a cost-effective solution for high- speed memory needs ...

Page 2

IDT71T016SA, 2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) Pin Configurations I/O 10 ...

Page 3

IDT71T016SA, 2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) Absolute Maximum Ratings Symbol Rating V Supply Voltage Relative Terminal Voltage Relative IN OUT Temperature Under Bias BIAS T ...

Page 4

IDT71T016SA, 2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) AC Test Conditions Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels AC Test Load AC Test Loads +1.25V Z = 50Ω I/O 0 Figure 1. ...

Page 5

IDT71T016SA, 2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) AC Electrical Characteristics Symbol Parameter READ CYCLE t Read Cycle Time RC t Address Access Time AA t Chip Select Access Time ACS (1) Chip Select Low to Output in ...

Page 6

IDT71T016SA, 2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) Timing Waveform of Read Cycle No. 2 ADDRESS OE CS BHE, BLE DATA OUT NOTES HIGH for Read Cycle. 2. Address must be valid prior to or ...

Page 7

IDT71T016SA, 2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) Timing Waveform of Write Cycle No. 2 (CS Controlled Timing) ADDRESS BHE, BLE WE DATA OUT DATA IN Timing Waveform of Write Cycle No. 3 (BHE, BLE ...

Page 8

IDT71T016SA, 2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) Ordering Information IDT 71T016 SA XX Device Power Speed Type XXX X Package Process/ Temperature Range Blank Commercial temperature range ...

Page 9

... CORPORATE HEADQUARTERS 6024 Silver Creek Valley Road San Jose, CA 95138 The IDT logo is a registered trademark of Integrated Device Technology, Inc. Commercial and Industrial Temperature Ranges Description Created new datasheet Updated datasheet to full release version. Updated overshoot and undershoot specifications and typical DC electrical characteristics ...

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