SI7900AEDN-T1 Vishay, SI7900AEDN-T1 Datasheet - Page 10

• Manufacturer Part Number: SI7900AEDN-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI7900AEDN-T1

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.026Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Continuous Drain Current: 6A
• Power Dissipation: 1.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: PowerPAK 1212
• Lead Free Status / Rohs Status: Not Compliant

AN822
Vishay Siliconix
CONCLUSIONS
As a derivative of the PowerPAK SO-8, the PowerPAK
1212-8 uses the same packaging technology and has
been shown to have the same level of thermal perfor-
mance while having a footprint that is more than 40 %
smaller than the standard TSSOP-8.
Recommended PowerPAK 1212-8 land patterns are
provided to aid in PC board layout for designs using this
new package.
www.vishay.com
4
105
95
85
75
65
55
45
0.00
Figure 5. Spreading Copper - Si7401DN
0 %
0.25
Spreading Copper (sq. in.)
0.50
0.75
1.00
100 %
1.25
1.50
1.75
50 %
2.00
The PowerPAK 1212-8 combines small size with attrac-
tive thermal characteristics. By minimizing the thermal
rise above the board temperature, PowerPAK simplifies
thermal design considerations, allows the device to run
cooler, keeps r
handle more current than a same- or larger-size MOS-
FET die in the standard TSSOP-8 or SO-8 packages.
Figure 6. Spreading Copper - Junction-to-Ambient Performance
130
120
110
100
90
80
70
60
50
0.00
Spreading Copper (sq. in.)
0.25
DS(ON)
0.50
50 %
low, and permits the device to
0.75
1.00
100 %
1.25
Document Number 71681
1.50
1.75
03-Mar-06
0 %
2.00