N28F001BXT150 Intel, N28F001BXT150 Datasheet - Page 32

• Manufacturer Part Number: N28F001BXT150
• Manufacturer: Intel

Specifications of N28F001BXT150

• Density: 1Mb
• Access Time (max): 150ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 17b
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: 0C to 70C
• Package Type: PLCC
• Program/erase Volt (typ): 11.4 to 12.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8b
• Number Of Words: 128K
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 32
• Lead Free Status / Rohs Status: Not Compliant

28F001BX
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.6.1
NOTES:
1.
2.
10.7
NOTES:
1.
2.
32
t
t
Boot Block Erase Time
Boot Block Program Time
Parameter Block Erase Time
Parameter Block Program Time
Main Block Erase Time
Main Block Program Time
Chip Erase Time
Chip Program Time
GHHWL
WHGH
Read timing characteristics during erase and program operations are the same as during read-only operations. Refer to
Section 10.5, AC Characteristics—Read-Only Operations .
Sampled, not 100% tested.
Refer to Table 3 for valid A
Refer to Table 3 for valid D
The on-chip WSM incorporates all program and erase system functions and overhead of standard Intel Flash memory,
including byte program and verify (programming) and block precondition, precondition verify, erase and erase verify
(erasing).
Program and erase durations are measured to completion (SR.7 = 1). V
program/erase success (SR.3/4/5 = 0).
For boot block programming and erasure, RP# should be held at V
(SR.3/4/5 = 0).
Alternate boot block access method.
See Standard Test Configuration .
Sampled, not 100% tested.
Alternate boot block access method.
25 °C, 12.0 V
Excludes System-Level Overhead.
Symbol
t
PROM PROGRAMMER SPECIFICATIONS
PHH
Erase and Programming Performance
Parameter
Versions
PP
.
OE# V
OE# V
HH
HH
IN
IN
Setup to WE# Going Low
Hold from WE# High
for byte programming or block erasure.
for byte programming or block erasure.
Parameter
Notes
2
2
2
2
2
2
2
2
V
Min
CC
±10%
Typ
10.10
–120
2.10
0.15
2.10
0.07
3.80
2.10
2.39
(1)
Notes
HH
1, 2
1, 2
until determination of program/erase success
PP
Max
14.9
0.52
14.6
0.26
20.9
7.34
8.38
65
should be held at V
Min
480
480
–120
Min
Max
Typ
3.80<
10.10
–150
2.10
0.15
2.10
0.07
2.10
2.39
PPH
(1)
until determination of
Min
480
480
–150
Max
14.9
0.52
14.6
0.26
20.9
7.34
8.38
65
Max
Unit
Sec
Sec
Sec
Sec
Sec
Sec
Sec
Sec
Unit
ns
ns