AUIRFP4004 International Rectifier, AUIRFP4004 Datasheet

54T8877

AUIRFP4004

Manufacturer Part Number
AUIRFP4004
Description
54T8877
Manufacturer
International Rectifier
Datasheet

Specifications of AUIRFP4004

Transistor Polarity
N Channel
Continuous Drain Current Id
195A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.00135ohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
380W
Rohs Compliant
Yes
Drain-source Breakdown Voltage
40 V
Continuous Drain Current
350 A
Power Dissipation
380 W
Mounting Style
Through Hole
Package / Case
TO-247AC
Gate Charge Qg
220 nC
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AUIRFP4004
Manufacturer:
IR
Quantity:
12 500
Part Number:
AUIRFP4004
Manufacturer:
IR
Quantity:
20 000
Applications
l
l
l
l
Benefits
l
l
l
www.irf.com
Absolute Maximum Ratings
I
I
I
I
P
V
dv/dt
T
T
Avalanche Characteristics
E
I
E
Thermal Resistance
R
R
R
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AR
θJC
θCS
θJA
@ T
@ T
@ T
High Efficiency Synchronous Rectification in
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
Avalanche SOA
Enhanced body diode dV/dt and dI/dt
Capability
SMPS
@T
Symbol
Symbol
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery f
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Single Pulse Avalanche Energy e
Avalanche Current d
Repetitive Avalanche Energy g
Junction-to-Case k
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient jk
Parameter
Parameter
GS
GS
@ 10V (Silicon Limited)
@ 10V (Wire Bond Limited)
G
S
D
Gate
G
IRFP4004PbF
Typ.
See Fig. 14, 15, 22a, 22b
0.24
–––
–––
V
R
I
I
D (Silicon Limited)
D (Package Limited)
DSS
DS(on)
10lbxin (1.1Nxm)
-55 to + 175
350c
250c
D
Max.
1390
TO-247AC
195
380
± 20
300
290
HEXFET Power MOSFET
2.5
2.0
typ.
Drain
max.
D
G
Max.
0.40
–––
D
40
S
1.35mΩ
1.70mΩ
Source
350A c
195A
40V
S
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
06/05/08
1

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AUIRFP4004 Summary of contents

Page 1

Applications l High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Benefits Improved Gate, Avalanche and Dynamic l dv/dt Ruggedness Fully Characterized Capacitance and l Avalanche SOA ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 175°C ...

Page 4

175°C 100 25° 0.1 0.0 0.4 0.8 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 350 300 Limited By Package 250 ...

Page 5

D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse 0.01 100 0.05 0.10 10 Allowed avalanche ...

Page 6

250µ 1.0mA 2 1.0A 2.0 1.5 1.0 -75 -50 - 100 125 150 175 200 Temperature ( °C ) ...

Page 7

D.U.T + ƒ ‚ -  R • • • SD • Fig 20 D.U 20V V GS 0.01 Ω Fig 21a. Unclamped Inductive Test Circuit ...

Page 8

TO-247AC package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 5)3( Ã " C %ÃÃÃÃÃÃÃÃÃÃÃ & Data and specifications subject to change without notice. This product ...

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