N25Q128A13ESF40F NUMONYX, N25Q128A13ESF40F Datasheet - Page 127
N25Q128A13ESF40F
Manufacturer Part Number
N25Q128A13ESF40F
Description
NUMN25Q128A13ESF40F 128MB SPI FLASH MEMO
Manufacturer
NUMONYX
Datasheet
1.N25Q128A13BSF40G.pdf
(180 pages)
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9.2.22
Figure 64. Read Volatile Configuration Register instruction sequence DIO-SPI
Write Volatile Configuration Register
The Write Volatile Configuration register (WRVCR) instruction allows new values to be
written to the Volatile Configuration register. Before it can be accepted, a write enable
(WREN) instruction must have been executed previously. In case of Fast POR, the WREN
instruction is not required because a WREN instruction gets the device out from the Fast
POR state (See
Apart form the parallelizing of the instruction code and the input data on the two pins DQ0
and DQ1, the instruction functionality is exactly the same as the Write Volatile Configuration
Register (WVCR) instruction of the Extended SPI protocol, please refer to
Write Volatile Configuration Register
Figure 65. Write Volatile Configuration Register instruction sequence DIO-SPI
DQ0
DQ0
DQ1
DQ1
C
C
S
S
Section 11.1: Fast
0
0
Instruction
Instruction
1
1
2
2
POR).
3
3
for further details.
7
7
6
6
4
4
5
5
4
4
Volatile Configuration
Volatile Configuration
5
5
Byte
Byte
3
3
2
2
6
6
Register Out
Register In
1
1
0
0
7
7
7
7
6
6
8
8
5
5
4
4
9 10 11
9 10 11
Byte
Byte
Dual_Write_VCR
Dual_Read_VCR
3
3
2
2
1
1
0
0
Section 9.1.31:
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