BSM50GX120DN2 Infineon Technologies, BSM50GX120DN2 Datasheet - Page 4

• Manufacturer Part Number: BSM50GX120DN2
• Manufacturer: Infineon Technologies

BSM 50 GB 120 DN2
Power dissipation
P
parameter: T
P
Collector current
I
parameter: V
C
tot
I
tot
C
= (T
= (T
450
350
300
250
200
150
100
50
90
70
60
50
40
30
20
10
W
A
0
0
C
0
0
)
C
)
20
20
j
GE
150 °C
40
40
15 V , T
60
60
j
80
80
150 °C
100
100
120
120
T
T
°C
°C
C
C
160
160
4
Safe operating area
I
parameter: D = 0, T
Transient thermal impedance
Z
parameter: D = t
Z
C
thJC
I
th JC
C
= (V
K/W
10
10
10
10
10
10
10
10
10
10
= (t
A
-1
-1
-2
-3
-4
3
2
1
0
0
CE
10
10
0
-5
)
p
)
single pulse
10
p
10
-4
/ T
1
C
= 25°C , T
10
-3
10
2
10
j
-2
IGBT
DC
150 °C
t
10
p = 14.0µs
Oct-21-1997
D = 0.50
10
3
100 µs
1 ms
10 ms
V
t
-1
p
0.20
0.10
0.05
0.02
0.01
CE
V
s
10
0