AT87C52X2-3CSUV Atmel, AT87C52X2-3CSUV Datasheet - Page 34
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AT87C52X2-3CSUV
Manufacturer Part Number
AT87C52X2-3CSUV
Description
Microcontrollers (MCU) Microcontroller
Manufacturer
Atmel
Datasheet
1.AT87C52X2-3CSUV.pdf
(55 pages)
Specifications of AT87C52X2-3CSUV
Data Bus Width
8 bit
Program Memory Type
EPROM
Program Memory Size
8 KB
Data Ram Size
256 B
Interface Type
UART
Maximum Clock Frequency
30 MHz
Number Of Programmable I/os
32
Number Of Timers
3 bit
Operating Supply Voltage
5 V
Maximum Operating Temperature
+ 70 C
Mounting Style
Through Hole
Package / Case
PDIL-40
Minimum Operating Temperature
0 C
Lead Free Status / Rohs Status
No
Programming Algorithm
Verify Algorithm
Figure 12. Programming and Verification Signal’s Waveform
EPROM Erasure
(Windowed Packages
Only)
Erasure Characteristics
34
TS8xCx2X2
Control signals
ALE/PROG
A0-A12
EA/VPP
D0-D7
12.75V
5V
0V
The Improved Quick Pulse algorithm is based on the Quick Pulse algorithm and
decreases the number of pulses applied during byte programming from 25 to 1.
To program the TS87C52X2 the following sequence must be exercised:
•
•
•
•
•
•
Repeat step 2 through 6 changing the address and data for the entire array or until the
end of the object file is reached (See Figure 12.).
Code array verify must be done after each byte or block of bytes is programmed. In
either case, a complete verify of the programmed array will ensure reliable programming
of the TS87C52X2.
P 2.7 is used to enable data output.
To verify the TS87C52X2 code the following sequence must be exercised:
•
•
•
Repeat step 2 through 3 changing the address for the entire array verification (See Fig-
ure 12.)
The encryption array cannot be directly verified. Verification of the encryption array is
done by observing that the code array is well encrypted.
Erasing the EPROM erases the code array, the encryption array and the lock bits return-
ing the parts to full functionality.
Erasure leaves all the EPROM cells in a 1’s state (FF).
The recommended erasure procedure is exposure to ultraviolet light (at 2537 Å) to an
integrated dose at least 15 W-sec/cm
Programming Cycle
Step 1: Activate the combination of control signals.
Step 2: Input the valid address on the address lines.
Step 3: Input the appropriate data on the data lines.
Step 4: Raise EA/VPP from VCC to VPP (typical 12.75V).
Step 5: Pulse ALE/PROG once.
Step 6: Lower EA/VPP from VPP to VCC
Step 1: Activate the combination of program and control signals.
Step 2: Input the valid address on the address lines.
Step 3: Read data on the data lines.
Data In
100µs
Read/Verify Cycle
2
. Exposing the EPROM to an ultraviolet lamp of
Data Out
4184I–8051–02/08