HUF76131SK8 Fairchild Semiconductor, HUF76131SK8 Datasheet - Page 8
HUF76131SK8
Manufacturer Part Number
HUF76131SK8
Description
MOSFET Power 10a 30V 0.013 Ohm 1Ch HS Logic Gate
Manufacturer
Fairchild Semiconductor
Specifications of HUF76131SK8
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.013 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
10 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOP-8
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
No
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HUF76131SK8T
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
PSPICE Electrical Model
SUBCKT HUF76131 2 1 3 ;
CA 12 8 2.22-9
CB 15 14 2.13e-9
CIN 6 8 1.52e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 37.4
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 1.04e-9
LSOURCE 3 7 1.29e-10
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1.94e-3
RGATE 9 20 2.20
RLDRAIN 2 5 10
RLGATE 1 9 10.4
RLSOURCE 3 7 1.29
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 8.75e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*275),3))}
.MODEL DBODYMOD D (IS = 2.25e-12 RS = 6.05e-3 IKF=16.00 TRS1 = 1.14e-4 TRS2 = 1.23e-6 CJO = 2.35e-9 TT = 2.71e-8 M = 0.44)
.MODEL DBREAKMOD D (RS = 1.05e-1 TRS1 = 1.01e-4 TRS2 = 1.11e-7)
.MODEL DPLCAPMOD D (CJO = 1.08e-9 IS = 1e-30 N = 10 M = 0.69)
.MODEL MMEDMOD NMOS (VTO = 1.89 KP = 5.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.20)
.MODEL MSTROMOD NMOS (VTO = 2.22 KP = 125.00 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.62 KP = 0.10 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 22.0 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 9.54e-4 TC2 = 1.07e-7)
.MODEL RDRAINMOD RES (TC1 = 1.61e-2 TC2 = 5.17e-5)
.MODEL RSLCMOD RES (TC1 = 1.03e-5 TC2 = 7.67e-7)
.MODEL RSOURCEMOD RES (TC1 = 0 TC2 = 0)
.MODEL RVTHRESMOD RES (TC = -2.81e-3 TC2 = -8.75e-6)
.MODEL RVTEMPMOD RES (TC1 = -6.68e-4 TC2 = 8.80e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.80 VOFF= -1.50)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.50 VOFF= -5.80)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.50 VOFF= -0.00)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.00 VOFF= -0.50)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2003 Fairchild Semiconductor Corporation
rev 12/31/97
GATE
1
RLGATE
LGATE
9
RGATE
CA
12
20
EVTEMP
+
S1A
S1B
ESG
18
22
EGS
13
8
+
-
-
13
6
8
10
+
+
-
-
14
13
6
6
8
RSLC2
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
51
5
5
-
MSTRO
14
+
51
21
RSLC1
50
RDRAIN
ESLC
16
8
MMED
8
EBREAK
IT
DBREAK
RSOURCE
17
MWEAK
RVTHRES
RBREAK
11
+
-
17
18
7
+
-
18
22
RVTEMP
19
RLSOURCE
DBODY
LSOURCE
VBAT
RLDRAIN
LDRAIN
HUF76131SK8 Rev. B1
SOURCE
DRAIN
2
3