FDMS3606AS Fairchild Semiconductor, FDMS3606AS Datasheet - Page 12
![MOSFET Power 30V Asymtrc Dual NCh PowerTrench MOSFET](/photos/37/61/376185/power56_sml.jpg)
FDMS3606AS
Manufacturer Part Number
FDMS3606AS
Description
MOSFET Power 30V Asymtrc Dual NCh PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDMS3606AS.pdf
(15 pages)
Specifications of FDMS3606AS
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11 mOhms, 2.8 mOhms
Forward Transconductance Gfs (max / Min)
61 S, 154 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
13 A, 27 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 56
Gate Charge Qg
59 nC, 27 nC
Minimum Operating Temperature
- 55
Module Configuration
Dual
Continuous Drain Current Id
40A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0058ohm
Lead Free Status / Rohs Status
Details
©2011 Fairchild Semiconductor Corporation
FDMS3606AS Rev.C4
2. Recommended PCB Layout Guidelines
As a PCB designer, it is necessary to address critical issues in layout to minimize losses and optimize the performance of the power
train. Power Stage is a high power density solution and all high current flow paths, such as VIN (D1), PHASE (S1/D2) and GND (S2),
should be short and wide for better and stable current flow, heat radiation and system performance. A recommended layout proce-
dure is discussed below to maximize the electrical and thermal performance of the part.
Figure 30. Shows the Power Stage in a buck converter topology
Figure 31. Recommended PCB Layout
12
www.fairchildsemi.com