MRF151G M/A-COM Technology, MRF151G Datasheet

RF MOSFET Power 5-175MHz 300Watts 50Volt Gain 14dB

MRF151G

Manufacturer Part Number

MRF151G

Description

RF MOSFET Power 5-175MHz 300Watts 50Volt Gain 14dB

Manufacturer

M/A-COM Technology

Datasheet

1.MRF151G.pdf (9 pages)

Specifications of MRF151G

Configuration

Single

Drain-source Breakdown Voltage

125 V

Gate-source Breakdown Voltage

40 V

Continuous Drain Current

16 A

Power Dissipation

300 W

Maximum Operating Temperature

+ 150 C

Package / Case

Case 375-04

Minimum Operating Temperature

- 65 C

Transistor Polarity

N-Channel

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MRF151G

Manufacturer:

m/a-com

Quantity:

5 000

Company:

BOSTOCK HK LIMITED

Part Number:

MRF151G

Manufacturer:

Company:

Meier Automation Equipment Co., Limited

Part Number:

MRF151G

Manufacturer:

MACOM

Quantity:

20 000

Company:

H&T Electronics

Part Number:

MRF151G

Quantity:

Company:

H&T Electronics

Part Number:

MRF151G

Quantity:

500

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MRF151GMP

Manufacturer:

MA/COM

Quantity:

5 000

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ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

RF Power Field-Effect Transistor

300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

Features

Guaranteed Performance at 175 MHz, 50 V:

• Output Power — 300 W

• Gain — 14 dB (16 dB Typ)

• Efficiency — 50%

• Low Thermal Resistance — 0.35°C/W

• Ruggedness Tested at Rated Output Power

• Nitride Passivated Die for Enhanced Reliability

Description and Applications

Designed for broadband commercial and military

applications at frequencies to 175 MHz. The high

power, high gain and broadband performance of this

device makes possible solid state transmitters for

FM broadcast or TV channel frequency bands.

MRF151G

Part Status: Released

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

Package Outline

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Products

RoHS Compliant

Related parts for MRF151G

MRF151G Summary of contents

Page 1

... MRF151G Part Status: Released RF Power Field-Effect Transistor 300 175 MHz N-Channel Broadband MOSFET Features Guaranteed Performance at 175 MHz • Output Power — 300 W • Gain — (16 dB Typ) • Efficiency — 50% • Low Thermal Resistance — 0.35°C/W • Ruggedness Tested at Rated Output Power • ...

Page 2

... MRF151G Part Status: Released RF Power Field-Effect Transistor 300 175 MHz N-Channel Broadband MOSFET 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 3

... MRF151G Part Status: Released RF Power Field-Effect Transistor 300 175 MHz N-Channel Broadband MOSFET 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 4

... MRF151G Part Status: Released RF Power Field-Effect Transistor 300 175 MHz N-Channel Broadband MOSFET 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 5

... MRF151G Part Status: Released RF Power Field-Effect Transistor 300 175 MHz N-Channel Broadband MOSFET 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 6

... MRF151G Part Status: Released RF Power Field-Effect Transistor 300 175 MHz N-Channel Broadband MOSFET 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 7

... MRF151G Part Status: Released RF Power Field-Effect Transistor 300 175 MHz N-Channel Broadband MOSFET 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 8

... MRF151G Part Status: Released RF Power Field-Effect Transistor 300 175 MHz N-Channel Broadband MOSFET 8 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 9

... MRF151G Part Status: Released RF Power Field-Effect Transistor 300 175 MHz N-Channel Broadband MOSFET 9 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

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