IRFR120N International Rectifier, IRFR120N Datasheet
IRFR120N
Manufacturer Part Number
IRFR120N
Description
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.21Ohm; ID 9.4A; D-Pak (TO-252AA); PD 48W
Manufacturer
International Rectifier
Datasheet
1.IRFR120N.pdf
(4 pages)
Specifications of IRFR120N
Application
Fast switching speed and ruggedized device design that for provides the designer with an extremely efficient device
Channel Type
N-Channel
Current, Drain
9.4 A
Fall Time
23 ns (Typ.)
Gate Charge, Total
25 nC
Mounting And Package Type
Surface Mount and TO-252AA
Operating And Storage Temperature
-55 to +175 °C
Package Type
D-Pak (TO-252AA)
Polarization
N-Channel
Power Dissipation
48 W
Resistance, Drain To Source On
0.21 Ohm
Resistance, Thermal, Junction To Case
3.1 °C⁄W (Max.)
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Thermal Resistance, Junction To Ambient
110 °C⁄W
Time, Rise
23 ns (Typ.)
Time, Turn-off Delay
32 ns
Time, Turn-on Delay
4.5 ns
Transconductance, Forward
2.7 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Diode Forward
1.3 V (Max.)
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Available stocks
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Manufacturer:
IR
Quantity:
15 052
Part Number:
IRFR120NPBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
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Part Number:
IRFR120NTRPBF
Manufacturer:
IR
Quantity:
2 000
Part Number:
IRFR120NTRPBF
Manufacturer:
IR
Quantity:
20 000
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IRFR120N Summary of contents
Page 1
...
Page 2
IRFR/U120N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
Page 3
IRFR/U120N Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches (. (. (. (.2 0 ...
Page 4
IRFR/U120N Tape & Reel Information TO-252AA ...